X-On Electronics has gained recognition as a prominent supplier of DMHC3025LSD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMHC3025LSD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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P2G N2G N2D/P2D N1S/N2S P1S/P2S N1D/P1D N1G P1G DMHC3025LSD 30V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features 2 x N + 2 x P channels in a SOIC package Low On-Resistance I max D Device V R max (BR)DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 25m V = 10V 6.0 GS N-Channel 30V Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 40m V = 4.5V 4.6 GS Halogen and Antimony Free. Green Device (Note 3) 50m V = -10V -4.2 GS Qualified to AEC-Q101 Standards for High Reliability P-Channel -30V 80m V = -4.5V -3.2 GS Mechanical Data Description Case: SO-8 This new generation complementary MOSFET H-Bridge features low Case Material: Molded Plastic,Gree Molding Compound. on-resistance achievable with low gate drive. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Applications Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 DC Motor control DC-AC Inverters Weight: 0.008 grams (approximate) SO-8 H-Bridge Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMHC3025LSD-13 SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMHC3025LSD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.5 W D Steady State 83 Thermal Resistance, Junction to Ambient (Note 5) R JA t < 10s 50 C/W Thermal Resistance, Junction to Case R 14.5 JC Operating and Storage Temperature Range T T -55 to 150 C J, STG Maximum Ratings N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 30 V DSS Gate-Source Voltage V 20 V GSS T = +25 C Steady A 6.0 A I D State 4.8 T = +70 C A Continuous Drain Current (Note 5) V = 10V GS T = +25 C 7.8 A t < 10s I A D 6.1 T = +70 C A T = +25 C Steady A 4.6 A I D State 3.6 T = +70 C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25 C 6.1 A t < 10s I A D 4.8 T = +70 C A Maximum Continuous Body Diode Forward Current (Note 5) I 2.5 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 60 A DM Maximum Ratings P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 30 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25 C -4.2 A A I D State -3.3 T = +70 C A Continuous Drain Current (Note 5) V = -10V GS T = +25 C -5.4 A t < 10s I A D T = +70 C -4.3 A Steady T = +25 C -3.2 A A I D State -2.5 T = +70 C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25 C -4.3 A t < 10s I A D -3.3 T = +70 C A Maximum Continuous Body Diode Forward Current (Note 5) I -2.5 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) -30 A I DM Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 November 2013 DMHC3025LSD Diodes Incorporated www.diodes.com Document number: DS35821 Rev. 4 - 2 NEW PRODUCT ADVANCE INFORMATION
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