X-On Electronics has gained recognition as a prominent supplier of DMHC4035LSD-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMHC4035LSD-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.
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P2G N2G N2D/P2D N1S/N2S P1S/P2S N1D/P1D P1G N1G DMHC4035LSD 40V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE Product Summary Features I max 2 x N + 2 x P channels in a SOIC package D Device V R max (BR)DSS DS(ON) T = +25C Low On-Resistance A 4.5A Low Input Capacitance 45m V = 10V GS N-Channel 40V Fast Switching Speed 58m V = 4.5V 4A GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 65m V = -10V -3.7A GS P-Channel -40V Halogen and Antimony Free. Green Device (Note 3) 100m V = -4.5V -2.9A GS Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation complementary MOSFET H-Bridge features low Case: SO-8 on-resistance achievable with low gate drive. Case Material: Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram DC Motor Control Terminals: Finish Matte Tin annealed over Copper leadframe. DC-AC Inverters Solderable per MIL-STD-202, Method 208 Weight: 0.074 grams (approximate) SO-8 H-Bridge Top View Top View Internal Schematic Pin Configuration Ordering Information (Note 4) Part Number Compliance Case Packaging DMHC4035LSD-13 Standard SO-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMHC4035LSD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.5 W D Steady State 85 Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 53 C/W Thermal Resistance, Junction to Case 15 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Maximum Ratings N-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 40 V DSS Gate-Source Voltage V 20 V GSS Steady T = +25C 4.5 A I A D State 3.5 T = +70C A Continuous Drain Current (Note 5) V = 10V GS 5.8 T = +25C A t<10s I A D T = +70C 4.5 A Steady T = +25C 4 A I A D State 3.1 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS 5.1 T = +25C A t<10s A I D 4 T = +70C A 1.5 Maximum Continuous Body Diode Forward Current (Note 5) I A S 25 Pulsed Drain Current (10s pulse, duty cycle = 1%) I A DM Maximum Ratings P-CHANNEL ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V -40 V DSS Gate-Source Voltage V 20 V GSS Steady -3.7 T = +25C A A I D State -2.9 T = +70C A Continuous Drain Current (Note 5) V = -10V GS T = +25C -4.8 A t<10s I A D T = +70C -3.8 A Steady T = +25C -2.9 A A I D State -2.3 T = +70C A Continuous Drain Current (Note 5) V = -4.5V GS T = +25C -3.9 A t<10s I A D T = +70C -3.0 A -1.5 Maximum Continuous Body Diode Forward Current (Note 5) I A S -15 Pulsed Drain Current (10s pulse, duty cycle = 1%) I A DM Note: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 9 January 2014 DMHC4035LSD Diodes Incorporated www.diodes.com Document number: DS36287 Rev. 1 - 2 NEW PRODUCT ADVANCE INFORMATION NEW PRODUCT
Understanding active and passive electronic components is fundamental to the field of electronics. Active components, such as transistors and ICs, provide amplification and control, while passive components, like resistors and capacitors, shape a
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