X-On Electronics has gained recognition as a prominent supplier of DMMT3904W Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. DMMT3904W Bipolar Transistors - BJT are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

DMMT3904W Diodes Incorporated

DMMT3904W electronic component of Diodes Incorporated
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Part No.DMMT3904W
Manufacturer: Diodes Incorporated
Category: Bipolar Transistors - BJT
Description: TRANS, NPNNPN MAT, 40V, 0.2A, SOT363
Datasheet: DMMT3904W Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.2411 ea
Line Total: USD 24.11 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 1
100 : USD 0.2411
500 : USD 0.215
1000 : USD 0.1462

   
Manufacturer
Product Category
Transistor Polarity
Brand
Collector Emitter Voltage Vbrceo
Power Dissipation Pd
Dc Collector Current
Dc Current Gain Hfe
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Module Configuration
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the DMMT3904W from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMMT3904W and other electronic components in the Bipolar Transistors - BJT category and beyond.

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DMMT3904W 40V MATCHED PAIR NPN SMALL SIGNAL TRANSISTOR IN SOT363 Features Mechanical Data BVceo > 40V Case: SOT363 I = 200mA high Collector Current Case Material: Molded Plastic, Green Molding Compound. C Pair of NPN transistors that are intrinsically matched (Note 1) UL Flammability Classification Rating 94V-0 2% Matching on Current Gain (h ) Moisture Sensitivity: Level 1 per J-STD-020 FE 2mV Matching on Base-Emitter Voltage (V ) Terminals: Finish Matte Tin Finish. Solderable per BE e3 Fully internally isolated in a small surface mount package MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 2 & 3) Weight: 0.006 grams (approximate) Halogen and Antimony Free.Gree Device (Note 4) Qualified to AEC-Q101 Standards for High Reliability Applications PPAP Capable (Note 5) Current mirrors Differential and instrumentation amplifiers Comparators SOT363 Device Schematic and Pin-Out Top View Top View Ordering Information (Note 4 & 5) Part Number Compliance Marking Reel Size (inches) Tape Width (mm) Quantity per Reel DMMT3904W-7-F AEC-Q101 K4A 7 8 3,000 DMMT3904WQ-7-F Automotive K4A 7 8 3,000 Notes: 1. Intrinsically matched pair as this is built with adjacent die from the same wafer. 2. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 3. See DMMT3904W Absolute Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Collector-Base Voltage V 60 V CBO Collector-Emitter Voltage V 40 V CEO Emitter-Base Voltage V 6.0 V EBO Collector Current I 200 mA C Thermal Characteristics Total Device ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 7) Total Device P 200 mW D Thermal Resistance, Junction to Ambient (Note 7) R 625 C/W JA Operating and Storage Temperature Range T , T -65 to +150 C J STG ESD Ratings (Note 8) Characteristic Symbol Value Unit JEDEC Class Electrostatic Discharge - Human Body Model ESD HBM 4,000 V 3A Electrostatic Discharge - Machine Model ESD MM 400 V C Note: 7. For a device mounted on minimum recommended pad layout with 1oz copper that is on a single-sided 1.6mm FR4 PCB the device is measured under still air conditions whilst operating in a steady-state. 8. Refer to JEDEC specification JESD22-A114 and JESD22-A115. Thermal Characteristics Total Device 2 of 6 May 2014 DMMT3904W Diodes Incorporated www.diodes.com Document number: DS30311 Rev. 12 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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