DMMT5551/DMMT5551S MATCHED NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-26 Complementary PNP Type Available (DMMT5401) Dim Min Max Typ Ideal for Low Power Amplification and Switching A 0.35 0.50 0.38 Intrinsically Matched NPN Pair (Note 1) B C B 1.50 1.70 1.60 2% Matched Tolerance, h , V , V FE CE(SAT) BE(SAT) Lead Free/RoHS Compliant (Note 4) C 2.70 3.00 2.80 Gree Device (Note 5 and 6) D 0.95 H F 0.55 Mechanical Data H 2.90 3.10 3.00 K M Case: SOT-26 J 0.013 0.10 0.05 Case Material: Molded Plastic,Gree Molding K 1.00 1.30 1.10 Compound, Note 7. UL Flammability Classification J D F L Rating 94V-0 L 0.35 0.55 0.40 Moisture Sensitivity: Level 1 per J-STD-020C E E C C E C 1 2 2 1 1 2 M 0.10 0.20 0.15 Terminal Connections: See Diagram 0 8 Terminals: Solderable per MIL-STD-202, Method 208 All Dimensions in mm Lead Free Plating (Matte Tin Finish annealed over Copper leadframe). C B B B E B Marking Information: K4R & K4T, See Page 3 1 1 2 1 2 2 Ordering & Date Code Information: See Page 3 DMMT5551S DMMT5551 (K4T Marking Code) Weight: 0.006 grams (approximate) (K4R Marking Code) Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Collector-Base Voltage V 180 V CBO Collector-Emitter Voltage V 160 V CEO Emitter-Base Voltage 6.0 V V EBO Collector Current - Continuous (Note 2) 200 mA I C Power Dissipation (Note 2, 3) P 300 mW d Thermal Resistance, Junction to Ambient (Note 2) 417 C/W R JA Operating and Storage Temperature Range T , T -55 to +150 C j STG Notes: 1. Built with adjacent die from a single wafer. 2. Device mounted on FR5 PCB: 1.0 x 0.75 x 0.62 in. pad layout as shown on suggested pad layout document AP02001, which can be found on our website at Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Collector-Base Breakdown Voltage V 180 V I = 100A, I = 0 (BR)CBO C E Collector-Emitter Breakdown Voltage V 160 V I = 1.0mA, I = 0 (BR)CEO C B Emitter-Base Breakdown Voltage 6.0 V V I = 10A, I = 0 (BR)EBO E C nA V = 120V, I = 0 CB E Collector Cutoff Current 50 I CBO A V = 120V, I = 0, T = 100C CB E A Emitter Cutoff Current 50 nA I V = 4.0V, I = 0 EBO EB C ON CHARACTERISTICS (Note 7) I = 1.0mA, V = 5.0V 80 C CE DC Current Gain (Note 8) 80 250 h I = 10mA, V = 5.0V FE C CE 30 I = 50mA, V = 5.0V C CE 0.15 I = 10mA, I = 1.0mA C B Collector-Emitter Saturation Voltage V V CE(SAT) 0.20 I = 50mA, I = 5.0mA C B I = 10mA, I = 1.0mA C B Base-Emitter Saturation Voltage V 1.0 V BE(SAT) I = 50mA, I = 5.0mA C B SMALL SIGNAL CHARACTERISTICS Output Capacitance C 6.0 pF V = 10V, f = 1.0MHz, I = 0 obo CB E V = 10V, I = 1.0mA, CE C Small Signal Current Gain h 50 250 FE f = 1.0kHz V = 10V, I = 10mA, CE C Current Gain-Bandwidth Product 100 300 MHz f T f = 100MHz V = 5.0V, I = 200A, CE C Noise Figure NF 8.0 dB R = 1.0k, f = 1.0kHz S Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. The DC Current Gain, h , (matched at I = 10mA and V = 5V) Collector Emitter Saturation Voltage, V , and Base Emitter Saturation Voltage, FE C CE CE(SAT) V are matched with typical matched tolerances of 1% and maximum of 2%. BE(SAT) 400 0.15 I C 0.14 = 10 350 I B 0.13 300 0.12 T = 150C A 0.11 250 0.10 200 0.09 150 0.08 T = 25C A 0.07 100 0.06 50 0.05 T = -50C A 0 0.04 0 175 200 110 100 25 50 75 100 125 150 1,000 T , AMBIENT TEMPERATURE (C) I , COLLECTOR CURRENT (mA) A C Fig. 1, Max Power Dissipation vs. Fig. 2, Collector Emitter Saturation Voltage Ambient Temperature vs. Collector Current DS30436 Rev. 8 - 2 2 of 4 DMMT5551/DMMT5551S Diodes Incorporated www.diodes.com P , POWER DISSIPATION (mW) D V, COLLECTOR TO EMITTER CE(SAT) SATURATION VOLTAGE (V)