DMN1008UFDF-7 Diodes Incorporated

DMN1008UFDF 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max 0.6mm Profile Ideal for Low Profile Applications D BV R Max DSS DS(ON) 2 T = +25C A PCB Footprint of 4mm Low Gate Threshold Voltage 8m V = 4.5V 12.2A GS 12V Fast Switching Speed 12.5m V = 2.5V 10.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer to the related automotive grade (Q-suffix) part. Description A listing can be found at This MOSFET is designed to minimize the on-state resistance DMN1008UFDF Marking Information Site 1 8N = Product Type Marking Code YM = Date Code Marking 8N Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2015 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code C H I J K L M N O P R Aug Sep Oct Nov Dec Month Jan Feb Mar Apr May Jun Jul 8 9 O N D Code 1 2 3 4 5 6 7 Site 2 8N = Product Type Marking Code YWX = Date Code Marking 8N Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2015 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 5 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 February 2020 DMN1008UFDF www.diodes.com Diodes Incorporated Datasheet number: DS38322 Rev. 4 - 2 ADVANCED INFORMATION YM YWX