DMN1016UCB6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Low Q & Q D G GD V R (BR)DSS DS(ON) T = +25C Small Footprint A Low Profile 0.62mm Height 20m V = 4.5V 6.6A GS 12V Totally Lead-Free & Full RoHS Compliant (Notes 1 & 2) 23m V = 2.5V 6.1A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: U-WLB1510-6 resistance (R ), yet maintain superior switching performance, Terminal Connections: See Diagram Below DS(ON) making it ideal for high-efficiency power management applications. Terminals: Finished SnAgCu Ball Weight: 0.0018 grams (Approximate) Applications Battery Management Load Switch Battery Protection U-WLB1510-6 Top View Ordering Information (Note 4) Part Number Case Packaging DMN1016UCB6-7 U-WLB1510-6 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1016UCB6 Maximum Ratings ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Units Drain-Source Voltage V 12 V DSS Gate-Source Voltage 8 V V GSS Steady 5.5 T = +25C A A Continuous Drain Current (Note 5) V =4.5V I GS D State 4.2 T = +70C A Steady T = +25C 6.6 A Continuous Drain Current (Note 6) V =4.5V I A GS D State T = +70C 5.3 A Pulsed Drain Current (Note 7) 30 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.92 W D Total Power Dissipation (Note 6) P 1.47 W D Thermal Resistance, Junction to Ambient (Note 5) R 136 C/W JA Thermal Resistance, Junction to Ambient (Note 6) 94 C/W RJA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current ( T = +25C) I 1.0 A V = 9.6V, V = 0V C DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.4 0.6 1.0 V VGS(TH) VDS = VGS, ID = 250A 16 20 V = 4.5V, I = 1.5A GS D Static Drain-Source On-Resistance R m DS(ON) 20 23 V = 2.5V, I = 1.5A GS D Forward Transfer Admittance 14 S Y V = 6V, I = 1.5A FS DS D Diode Forward Voltage (Note 6) V 0.7 1.0 V V = 0V, I = 1.5A SD GS S 8 Reverse Recovery Charge Q nC RR V = 6V, I = 1.5A, DD F 43.6 di/dt =200A/s Reverse Recovery Time t ns RR DYNAMIC CHARACTERISTICS (Note 9) 550 Input Capacitance C 423 pF ISS V = 6V, V = 0V, DS GS 238 310 Output Capacitance C pF OSS f = 1.0MHz 41 55 Reverse Transfer Capacitance C pF RSS Series Gate Resistance R 3 V = 0V, V = 0V, f = 1MHz G DS GS Total Gate Charge (4.5V) 4.2 5.5 nC Q G V = 4.5V, V = 6V, GS DS Gate-Source Charge 0.6 nC Q GS I =1.5A D Gate-Drain Charge 0.4 nC Q GD 5 8 Turn-On Delay Time t ns D(ON) 10 Turn-On Rise Time t ns R V = 6V, V = 4.5V, DS GS 25 40 R = 4, I = 1.5A Turn-Off Delay Time t ns G D D(OFF) 10 Turn-Off Fall Time t ns F Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 2 2 6. Device mounted on FR4 material with 1-inch (6.45-cm ), 2-oz (0.071-mm thick) Cu. 7. 300ms pulse, pulse duty cycle<=2%. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN1016UCB6 October 2016 Diodes Incorporated www.diodes.com Document number: DS37124 Rev. 5 - 2