DMN1019UFDE 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications I D max V R Package (BR)DSS DS(ON) max T = +25C PCB footprint of 4mm2 A Low Gate Threshold Voltage 10m V = 4.5V 11A GS Fast Switching Speed 12m V = 2.5V 10 GS U-DFN2020-6 12V 14m V = 1.8V 9A ESD Protected Gate GS Type E 18m V = 1.5V 8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 41m V = 1.2V 5A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (RDS(on)) and yet maintain superior switching Case: U-DFN2020-6 Type E performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable Load Switching per MIL-STD-202, Method 208 e4 Battery Management Application Weight: 0.008 grams (approximate) Power Management Functions U-DFN2020-6 D Type E Pin1 G Gate Protection S ESD PROTECTED Diode Pin Out Bottom View Bottom View Equivalent Circuit Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMN1019UFDE-7 N7 7 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1019UFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 12 V DSS Gate-Source Voltage V 8 V GSS T = +25C Steady A 11 A I D State 9 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25C 14 A t<5s I A D 11 T = +70C A Maximum Continuous Body Diode Current I 3.0 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 100 A DM Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.69 A Total Power Dissipation (Note 5) P W D 0.44 T = +70C A Steady state 182 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA 118 t<5s T = +25C 2.17 A Total Power Dissipation (Note 6) P W D 1.38 T = +70C A Steady state 58 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 38 C/W Thermal Resistance, Junction to Case (Note 6) 10 R Jc Operating and Storage Temperature Range -55 to +150 C T T J, STG 100 100 P = 10s W 90 Single Pulse R R = 178C/W DS(on) JA 80 Limited R = r * R JA(t) (t) JA 10 T - T = P * R JA JA(t) 70 DUT on MRP 60 DC P = 10s W 50 1 P = 1s W 40 P = 100ms W P = 10ms W 30 P = 1ms W 0.1 T = 150C P = 100s J(max) W 20 T = 25C A Single Pulse 10 DUT on 1 * MRP Board V = 8V GS 0.01 0 0.01 0.1 1 10 100 0.0001 0.001 0.01 0.1 1 10 100 1,000 V , DRAIN-SOURCE VOLTAGE (V) t1, PULSE DURATION TIME (sec) DS Fig. 1 Single Pulse Maximum Power Dissipation Fig. 2 SOA, Safe Operation Area 2 of 7 October 2013 DMN1019UFDE Diodes Incorporated www.diodes.com Datasheet number: DS35561 Rev. 5 - 2 ADVANCE INFORMATION P , PEAK TRANSIENT POIWER (W) (PK) I, DRAIN CURRENT (A) D