DMN1019USN 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D V R (BR)DSS DS(ON) MAX T = +25C A ESD Protected Gate 9.3A 10m V = 4.5V GS Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) 8.5A 12m V = 2.5V GS Halogen and Antimony Free. Green Device (Note 3) 12V 7.9A 14m V = 1.8V GS Qualified to AEC-Q101 Standards for High Reliability 6.9A 18m V = 1.5V GS 41m V = 1.2V 4.6A GS Mechanical Data Case: SC59 Description Case Material Molded Plastic. UL Flammability Rating 94V-0 This new generation MOSFET has been designed to minimize the on- Moisture Sensitivity: Level 1 per J-STD-020 state resistance (R ) and yet maintain superior switching DS(ON) Terminals: Finish - Matte Tin Solderable per MIL-STD-202, performance, making it ideal for high efficiency power management Method 208 e3 applications. Terminal Connections: See Diagram Weight: 0.014 grams (approximate) Applications Load Switch DC-DC Converters Power Management Functions SC59 D D G Gate Protection S G S Diode ESD PROTECTED Top View Equivalent Circuit Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN1019USN-7 SC59 3,000/Tape & Reel DMN1019USN-13 SC59 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1019USN Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 12 V DSS Gate-Source Voltage V 8 V GSS T = +25C Steady A 9.3 A I D State 7.4 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 11 A t<10s I A D 8.8 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 70 A DM Maximum Body Diode Forward Current (Note 6) I 2 A S Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.68 A Total Power Dissipation (Note 5) W P D T = +70C 0.4 A Steady state 160 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 115 C/W T = +25C 1.2 A Total Power Dissipation (Note 6) W P D T = +70C 0.83 A Steady state 96 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 68 C/W Thermal Resistance, Junction to Case (Note 6) R 18 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V =12V, V = 0V DSS DS GS Gate-Body Leakage I 2 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.35 0.53 0.8 V V = V , I = 250A GS(th) DS GS D 7 10 V = 4.5V, I = 9.7A GS D 8 12 V = 2.5V, I = 9A GS D Static Drain-Source On-Resistance 10 14 m R V = 1.8V, I = 8.1A DS(ON) GS D 14 18 V = 1.5V, I = 4.5A GS D 28 41 V = 1.2V, I = 2.4A GS D Forward Transfer Admittance 28 S IY I V = 4V, I = 9.7A fs DS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 10A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 2426 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 396 Output Capacitance C pF oss f = 1MHz 375 Reverse Transfer Capacitance C pF rss 1.1 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 50.6 Total Gate Charge (V = 8V) Q GS g Total Gate Charge (V = 4.5V) Q 27.3 GS g nC V = 4V, I = 10A DS D Gate-Source Charge 3.4 Q gs Gate-Drain Charge 5.2 Q gd Turn-On Delay Time 7.6 ns t D(ON) 22.2 Turn-Off Delay Time t ns V = 4V, V = 5V, I = 10A, D(OFF) DD GEN D 57.6 Turn-On Rise Time t ns R = 1 , R = 0.4 r G L 16.8 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. The power dissipation P is based on t<10s R . D JA 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2 oz. Copper, single sided. The power dissipation P is based on t<10s R . D JA 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 May 2014 DMN1019USN Diodes Incorporated www.diodes.com Document number: DS36999 Rev. 2 - 2 NEW PRODUCT