DMN1029UFDB N-CHANNEAL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D MAX V R (BR)DSS DS(ON) Max Low Input Capacitance T = +25C A Low Profile, 0.6mm Max Height 29m V = 4.5V 5.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 34m V = 2.5V 5.1A GS Halogen and Antimony Free. Green Device (Note 3) 12V 44m V = 1.8V 4.5A GS 65m V = 1.5V 3.7A GS Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance Case: U-DFN2020-6 (R ) and yet maintain superior switching performance, making it DS(ON) Case Material: Molded Plastic, Green Molding Compound. ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable Applications per MIL-STD-202, Method 208 e4 Load Switch Terminals Connections: See Diagram Below Power Management Functions Weight: 0.0065 grams (Approximate) Portable Power Adaptors U-DFN2020-6 D 1 D2 S2 G2 D2 D1 G1 G2 D1 D2 G1 S1 S1 S2 Pin1 Bottom View Q1 N-CHANNEL MOSFET Q2 N-CHANNEL MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN1029UFDB -7 U-DFN2020-6 3000/Tape & Reel DMN1029UFDB -13 U-DFN2020-6 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1029UFDB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 12 V V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 5.6 A I A D State 4.4 T = +70C A Continuous Drain Current (Note 5) V = 4.5V GS T = +25C A 7.2 t < 5s A I D 5.8 T = +70C A 1 Maximum Continuous Body Diode Forward Current (Note 5) I A S Pulsed Drain Current (10 s pulse, Duty Cycle = 1%) I 20 A DM Avalanche Current (L = 0.1mH) I 15 A AS Avalanche Energy (L = 0.1mH) E 12 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Steady State 1.4 Total Power Dissipation (Note 5) P W D t < 5s 2.2 Steady State 91 Thermal Resistance, Junction to Ambient (Note 5) R JA C/W t < 5s 55 Thermal Resistance, Junction to Case 20 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage 12 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C 1.0 A J I V = 12V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.4 1 V V = V , I = 250A GS(TH) DS GS D 17 29 V = 4.5V, I = 5A GS D 20 34 V = 2.5V, I = 4.6A GS D Static Drain-Source On-Resistance m R DS(ON) 24 44 V = 1.8V, I = 4.1A GS D 30 65 V = 1.5V, I = 2A GS D Diode Forward Voltage V 0.6 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C 914 pF iss V = 6V, V = 0V, DS GS Output Capacitance 132 pF C oss f = 1.0MHz Reverse Transfer Capacitance 119 pF C rss Gate Resistance 1.26 R V = 0V, V = 0V, f = 1MHz g DS GS 10.5 Total Gate Charge (V = 4.5V) nC GS Q g 19.6 Total Gate Charge (V = 8V) nC GS V = 6V, I = 6.5A DS D 1.2 Gate-Source Charge Q nC gs 1.6 Gate-Drain Charge Q nC gd 5.0 Turn-On Delay Time t ns D(ON) 10.5 Turn-On Rise Time t ns R V = 6V, V = 4.5V, DD GS Turn-Off Delay Time t 16.6 ns R = 1.2, R = 1 D(OFF) L G Turn-Off Fall Time 4.1 ns t F Notes: 5. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 DMN1029UFDB February 2015 Diodes Incorporated www.diodes.com Document number: DS37711 Rev. 2 - 2 NEW PRODUCT