DMN1053UCP4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = 4.5V, T = +25C) Features GS A TR-MOS Technology with the Lowest R DS(ON) BV R I DSS DS(ON) D CSP with Footprint 0.81mm 0.81mm (Typ.) 12V 38m 4.0A Height = 0.29mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description This new generation MOSFET is engineered to minimize on-state Mechanical Data losses and switch ultra-fast, making it ideal for high-efficiency power transfer. It uses Chip-Scale Package (CSP) to increase power density Case: X3-DSN0808-4 by combining low thermal impedance with minimal R per DS(ON) Terminal Connections: See Diagram Below footprint area. Terminal Finish: Matte Tin Annealed Over Copper Pillar UBM: 203m Applications DC-DC Converters Battery Management Load Switch Top-View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN1053UCP4-7 X3-DSN0808-4 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1053UCP4 Maximum Ratings Characteristic Symbol Value Unit Drain-Source Voltage V 12 V DSS Gate-Source Voltage V 8 V GSS T = +25C 2.7 A Continuous Source Current V = 4.5V (Note 5) I A GS D 2.2 T = +70C A T = +25C 4.0 A Continuous Source Current V = 4.5V (Note 6) A GS I D 3.2 T = +70C A Pulsed Drain Current (Pulse Duration 10s, Duty Cycle 1%) I 8 A DM Continuous Source-Drain Diode Current I 0.74 A S Pulse Diode Forward Current I 15 A SM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.74 W D Thermal Resistance, Junction to Ambient (Note 5) 167 C/W R JA Total Power Dissipation (Note 6) P 1.34 W D Thermal Resistance, Junction to Ambient (Note 6) 93 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG . Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 12 - - V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 9.6V, V = 0V DSS DS GS Gate-Body Leakage I - - 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.35 0.5 0.7 V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 1.0A GS D 38 42 V = 2.5V, I = 1.0A 42 50 GS D 45 53 V = 2.1V, I = 1.0A GS D Static Drain-Source On-Resistance R - m DS(ON) 49 65 V = 1.8V, I = 0.5A GS D 57 80 V = 1.5V, I = 0.2A GS D 82 110 V = 1.2V, I = 0.1A GS D Forward Transfer Admittance Y - 6.0 - S V = 6V, I = 1.0A fs DS S Body Diode Forward Voltage V - 0.7 1 V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 612 908 pF iss V = 6V, V = 0V, DS GS Output Capacitance C - 91 127 pF oss f = 1.0MHz Reverse Transfer Capacitance C - 84 126 pF rss Gate Resistance R - 1.3 2.6 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 7.2 15 nC g V = 4.5V, V = 6V, GS DS 0.6 Gate-Source Charge Q - - nC gs I = 1.0A D 1.3 Gate-Drain Charge Q - - nC gd Turn-On Delay Time - 3.6 10 ns t D(ON) Turn-On Rise Time - 6.0 14 ns t V = 6V, I = 1.0A R DD D V = 4.5V, R = 1, R = 6 Turn-Off Delay Time - 13.5 32 ns GEN G L t D(OFF) Turn-Off Fall Time - 2 4 ns t F 0.7 Reverse Recovery Charge Q - 1.5 nC RR I = 1A, di/dt = 100A/s F 6.4 Body Diode Reverse Recovery Time t - 14 ns RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN1053UCP4 July 2017 Diodes Incorporated www.diodes.com Document number: DS38789 Rev. 2 - 2 NEW PRODUCT AADDVVAANNCCEED I INNFFOORRMMAATTIIOONN