DMN1054UCB4 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary (Typ. V = 4.5V, T = +25C) Features GS A Trench-CSP Technology with the Lowest on Resistance: V R Q Q I R = 35m to Minimize On-State Losses DSS DS(ON) g gd D DS(ON) Q = 9.6nC for Ultra-Fast Switching g 8V 35m 9.6nC 0.9nC 4.0A V = 0.6V Typ. for a Low Turn-On Potential GS(TH) CSP with Footprint 0.8mm 0.8mm Description Height = 0.375mm for Low Profile Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) The DMN1054UCB4 is a Trench MOSFET, engineered to minimize Halogen and Antimony Free. Green Device (Note 3) on-state losses and switch ultra-fast, making it ideal for high-efficiency power transfer. Using Chip-Scale Package (CSP) to increase power density by combining low thermal impedance with minimal R DS(ON) Mechanical Data per footprint area. Case: X1-WLB0808-4 Terminal Connections: See Diagram Below Applications DC-DC Converters Battery Management Load Switch X1-WLB0808-4 Top-View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN1054UCB4-7 X1-WLB0808-4 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1054UCB4 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 8 V DSS Gate-Source Voltage V 5 V GSS T = +25C 2.7 A Continuous Source Current V = 4.5V (Note 5) I A GS D 2.2 T = +70C A T = +25C 4.0 A A Continuous Source Current V = 4.5V (Note 6) I GS D 3.2 T = +70C A Pulsed Drain Current (Pulse duration 10s, duty cycle 1%) I 8 A DM Continuous Source-Drain Diode Current I 0.74 A S Pulse Diode Forward Current I 15 A SM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.74 W D Thermal Resistance, Junction to Ambient (Note 5) 169 C/W R JA Total Power Dissipation (Note 6) 1.34 W P D Thermal Resistance, Junction to Ambient (Note 6) 93 C/W R JA Operating and Storage Temperature Range -55 to +150 C T T J, STG . Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 8 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 8V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.35 0.7 V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 1.0A GS D 35 42 38.5 50 V = 2.5V, I = 1.0A GS D Static Drain-Source On-Resistance 46.4 65 m R V = 1.8V, I = 0.5A DS(ON) GS D 53.3 80 V = 1.5V, I = 0.2A GS D 64.7 110 V = 1.2V, I = 0.1A GS D Forward Transfer Admittance 6.0 S Y V = 6V, I = 1.0A fs DS S Body Diode Forward Voltage 0.7 1 V V V = 0V, I = 1.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 698 908 pF C iss VDS = 6V, VGS = 0V, Output Capacitance C 97 127 pF oss f = 1.0MHz Reverse Transfer Capacitance C 90 126 pF rss Gate Resistance R 1.3 2.6 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 9.6 15 nC g V = 4.5V, V = 6V, GS DS Gate-Source Charge Q 0.9 nC gs I = 1.0A D Gate-Drain Charge 0.9 nC Q gd Turn-On Delay Time t 5.2 10 ns D(ON) Turn-On Rise Time t 6.7 14 ns R V = 6V, I = 1.0A DD D Turn-Off Delay Time t 16.6 32 ns V = 4.5V, R = 1, R = 6 D(OFF) GEN G L Turn-Off Fall Time t 2 4 ns F Reverse Recovery Charge Q 0.7 1.5 nC RR I = 1A, di/dt = 100A/s F Body Diode Reverse Recovery Time 6.9 14 ns t RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN1054UCB4 August 2016 Diodes Incorporated www.diodes.com Document number: DS37579 Rev. 5 - 2