DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A density end products 80m V = 10V 4.2A GS Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100V 99m V = 6.0V 3.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description This MOSFET has been designed to minimize the on-state resistance Case: POWERDI3333-8 (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(on) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Applications Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.034 grams (approximate) DC-DC Converters POWERDI3333-8 Pin 1 8 1 S S S 7 2 G 6 3 D 5 4 D D Top View D Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H099SFG-7 Standard POWERDI3333-8 2000/Tape & Reel DMN10H099SFG-13 Standard POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H099SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 4.2 A I D State 3.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 5.8 A t<10s I A D 4.5 T = +70C A Steady T = +25C 3.6 A I A D State 2.9 T = +70C A Continuous Drain Current (Note 6) V = 6V GS T = +25C 5.2 A t<10s I A D 4.1 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 20 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 0.98 T = +25C A Total Power Dissipation (Note 5) P W D 0.57 T = +70C A Steady state 131 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 76 2.31 T = +25C A Total Power Dissipation (Note 6) P W D 1.18 T = +70C A Steady state 55 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 28 C/W Thermal Resistance, Junction to Case (Note 6) 6.9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.5 2.0 3.0 V V V = V , I = 250 A GS(th) DS GS D - 54 80 V = 10V, I = 3.3A GS D Static Drain-Source On-Resistance R m DS (ON) - 58 99 V = 6.0V, I = 3.0A GS D Forward Transfer Admittance Y - 13 - S V = 10V, I = 3.3A fs DS D Diode Forward Voltage V - 0.77 - V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 1172 - pF iss V = 50V, V = 0V, DS GS Output Capacitance C - 40.8 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 31.3 - pF rss Gate Resistance R - 1.6 - V = 0V, V = 0V, f = 1.0MHz g DS GS - 25.2 - nC Total Gate Charge V = 10V Q GS g - 12.2 - nC Total Gate Charge V = 4.5V Q GS g V = 50V, I = 3.3A DS D Gate-Source Charge - 5.3 - nC Q gs Gate-Drain Charge - 5.9 - nC Q gd Turn-On Delay Time t - 5.4 - ns D(on) Turn-On Rise Time t - 5.9 - ns V = 10V, V = 50V, r GS DS Turn-Off Delay Time t - 20.0 - ns R = 6.0, I = 3.3A D(off) G D Turn-Off Fall Time t - 7.3 - ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 January 2014 DMN10H1099SFG Diodes Incorporated www.diodes.com Document number: DS36371 Rev. 2 - 2 ADVANCE INFORMATION