X-On Electronics has gained recognition as a prominent supplier of DMN10H099SFG-13 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN10H099SFG-13 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN10H099SFG-13 Diodes Incorporated

DMN10H099SFG-13 electronic component of Diodes Incorporated
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Part No.DMN10H099SFG-13
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET 100V N-Ch Enh Mode 1127pF 25.2nC
Datasheet: DMN10H099SFG-13 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.759 ea
Line Total: USD 0.76 
Availability - 7798
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
7798
Ship by Wed. 20 Nov to Fri. 22 Nov
MOQ : 1
Multiples : 1
1 : USD 0.759
10 : USD 0.6647
100 : USD 0.4531
500 : USD 0.3795
1000 : USD 0.3232
3000 : USD 0.2484

   
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RoHS - XON
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Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
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Qg - Gate Charge
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We are delighted to provide the DMN10H099SFG-13 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN10H099SFG-13 and other electronic components in the MOSFETs category and beyond.

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DMN10H099SFG 100V N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features and Benefits Low R ensures on state losses are minimized DS(ON) I max D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C A density end products 80m V = 10V 4.2A GS Occupies just 33% of the board area occupied by SO-8 enabling smaller end product 100V 99m V = 6.0V 3.6A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Mechanical Data Description This MOSFET has been designed to minimize the on-state resistance Case: POWERDI3333-8 (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic,Gree Molding Compound. DS(on) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Applications Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.034 grams (approximate) DC-DC Converters POWERDI3333-8 Pin 1 8 1 S S S 7 2 G 6 3 D 5 4 D D Top View D Internal Schematic Top View Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H099SFG-7 Standard POWERDI3333-8 2000/Tape & Reel DMN10H099SFG-13 Standard POWERDI3333-8 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H099SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 4.2 A I D State 3.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 5.8 A t<10s I A D 4.5 T = +70C A Steady T = +25C 3.6 A I A D State 2.9 T = +70C A Continuous Drain Current (Note 6) V = 6V GS T = +25C 5.2 A t<10s I A D 4.1 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 20 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 0.98 T = +25C A Total Power Dissipation (Note 5) P W D 0.57 T = +70C A Steady state 131 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 76 2.31 T = +25C A Total Power Dissipation (Note 6) P W D 1.18 T = +70C A Steady state 55 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 28 C/W Thermal Resistance, Junction to Case (Note 6) 6.9 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 80V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1.5 2.0 3.0 V V V = V , I = 250 A GS(th) DS GS D - 54 80 V = 10V, I = 3.3A GS D Static Drain-Source On-Resistance R m DS (ON) - 58 99 V = 6.0V, I = 3.0A GS D Forward Transfer Admittance Y - 13 - S V = 10V, I = 3.3A fs DS D Diode Forward Voltage V - 0.77 - V V = 0V, I = 3.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C - 1172 - pF iss V = 50V, V = 0V, DS GS Output Capacitance C - 40.8 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 31.3 - pF rss Gate Resistance R - 1.6 - V = 0V, V = 0V, f = 1.0MHz g DS GS - 25.2 - nC Total Gate Charge V = 10V Q GS g - 12.2 - nC Total Gate Charge V = 4.5V Q GS g V = 50V, I = 3.3A DS D Gate-Source Charge - 5.3 - nC Q gs Gate-Drain Charge - 5.9 - nC Q gd Turn-On Delay Time t - 5.4 - ns D(on) Turn-On Rise Time t - 5.9 - ns V = 10V, V = 50V, r GS DS Turn-Off Delay Time t - 20.0 - ns R = 6.0, I = 3.3A D(off) G D Turn-Off Fall Time t - 7.3 - ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 January 2014 DMN10H1099SFG Diodes Incorporated www.diodes.com Document number: DS36371 Rev. 2 - 2 ADVANCE INFORMATION

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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