DMN10H100SK3
100V N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low R ensures on state losses are minimized
DS(ON)
I
D
BV R
DSS DS(ON) max
Small form factor thermally efficient package enables higher
T = +25C
C
18A
80m @ V = 10V density end products
GS
100V
100m @ V = 4.5V 16A
GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
Halogen and Antimony Free. Green Device (Note 3)
Description
Mechanical Data
This new generation MOSFET features low on-resistance and fast
switching, making it ideal for high efficiency power management Case: TO252
applications. Case Material: Molded Plastic, Green Molding Compound;
UL Flammability Classification Rating 94V-0
Applications Moisture Sensitivity: Level 1 per J-STD-020
Terminal Connections: See Diagram
Power Management Functions
Terminals: Finish Matte Tin Annealed over Copper Leadframe
DC-DC Converters
Solderable per MIL-STD-202, Method 208
Weight: 0.33 grams (Approximate)
D
TO252
D
G S
Top View Top View Internal Schematic
Pin Out
Ordering Information (Note 4)
Part Number Case Packaging
DMN10H100SK3-13 TO252 2,500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN10H100SK3
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 100 V
DSS
Gate-Source Voltage V 20 V
GSS
T = +25C
C 18
Continuous Drain Current (Note 6) V = 10V I A
GS D
14
T = +70C
C
Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 16 A
I
DM
Avalanche Current, L = 1mH (Note 7) I 8 A
AS
Avalanche Energy, L = 1mH (Note 7) E 32.6 mJ
AS
Thermal Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
37
T = +25C
C
Total Power Dissipation (Note 6) P W
D
T = +70C 24
C
Thermal Resistance, Junction to Ambient (Note 5) R 46
JA
C/W
Thermal Resistance, Junction to Case (Note 6) R 3.3
JC
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 8)
Drain-Source Breakdown Voltage 100 V
BV V = 0V, I = 250A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 80V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 20V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 8)
Gate Threshold Voltage V 1.0 2.0 3.0 V V = V , I = 250A
GS(TH) DS GS D
65 80 V = 10V, I = 3.3A
GS D
Static Drain-Source On-Resistance m
R
DS(ON)
70 100 V = 4.5V, I = 2A
GS D
Diode Forward Voltage V 0.77 V V = 0V, I = 3.2A
SD GS S
DYNAMIC CHARACTERISTICS (Note 7)
Input Capacitance C 1172
iss
Output Capacitance C 40.8 pF V = 50V, V = 0V, f = 1MHz
oss DS GS
Reverse Transfer Capacitance 31.3
C
rss
Gate Resistance 1.6
R V = 0V, V = 0V, f = 1MHz
G DS GS
25.2
Total Gate Charge (V = 10V) Q
GS g
Total Gate Charge (V = 4.5V) Q 12.2
GS g
nC
VDS = 50V, ID = 3.3A
Gate-Source Charge Q 5.3
gs
Gate-Drain Charge Q 5.9
gd
Turn-On Delay Time t 5.4
D(ON)
Turn-On Rise Time t 5.9
R
ns V = 50V, R = 6.0, I = 3.3A
DD G D
Turn-Off Delay Time t 20
D(OFF)
Turn-Off Fall Time 7.3
t
F
Body Diode Reverse Recovery Time 19.7 ns
t
RR
I = 3.3A, dI/dt = 100A/s
F
Body Diode Reverse Recovery Charge 15.9 nC
Q
rr
Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate.
6. Device mounted on infinite heatsink.
7. Guaranteed by design. Not subject to product testing.
8. Short duration pulse test used to minimize self-heating effect.
2 of 7
DMN10H100SK3 April 2015
Diodes Incorporated
www.diodes.com
Document number: DS37858 Rev. 2 - 2
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