DMN10H170SFG N-CHANNEL ENHANCEMENT MODE MOSFET POWERDI Product Summary Features I max 100% Unclamped Inductive Switch (UIS) test in production D V R max (BR)DSS DS(ON) T = +25C A Low R ensures on state losses are minimized DS(ON) 122m V = 10V 2.9A GS Small form factor thermally efficient package enables higher 100V 133m V = 4.5V 2.7A GS density end products Occupies just 33% of the board area occupied by SO-8 enabling Description smaller end product Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) This MOSFET has been designed to minimize the on-state resistance Halogen and Antimony Free. Green Device (Note 3) (R ) and yet maintain superior switching performance, making it DS(on) Qualified to AEC-Q101 Standards for High Reliability ideal for high efficiency power management applications. Mechanical Data Applications Case: POWERDI3333 Backlighting Case Material: Molded Plastic,Gree Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections Indicator: See diagram Terminals: Finish Matte Tin annealed over Copper leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.034 grams (approximate) POWERDI3333 Pin 1 S D S S G G D D D D S Top View Equivalent Circuit Bottom View Ordering Information (Note 4) Part Number Compliance Case Packaging DMN10H170SFG-7 Standard POWERDI3333 2000/Tape & Reel DMN10H170SFG-13 Standard POWERDI3333 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H170SFG Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C A 2.9 Steady 2.4 A T = +70C I A D State 8.5 Continuous Drain Current (Note 6) V = 10V T = +25C GS C T = +25C 3.7 A t<10s I A D 3.0 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 3.0 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) 16 A I DM Avalanche Current (Note 7) IAR 5.3 A Avalanche Energy (Note 7) EAR 20 mJ Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.94 A Total Power Dissipation (Note 5) W P D T = +70C 0.6 A Steady State 137 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 82 C/W T = +25C 2.0 A Total Power Dissipation (Note 6) W P D T = +70C 1.3 A Steady State 60 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 36 C/W Thermal Resistance, Junction to Case (Note 6) R 7.0 C/W JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 100V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1.0 3.0 V V = V , I = 250A GS(th) DS GS D 99 122 V = 10V, I = 3.3A GS D Static Drain-Source On-Resistance m R DS(ON) 104 133 V = 4.5V, I = 3.0A GS D Forward Transfer Admittance Y 4.4 S V = 10V, I = 3.3A fs DS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 3.3A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 870.7 pF iss V = 25V, V = 0V, DS GS Output Capacitance 40.8 pF C oss f = 1.0MHz Reverse Transfer Capacitance 24.6 pF C rss Gate resistance 1.1 R V = 0V, V = 0V, f = 1.0MHz g DS GS 7.0 nC Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q 14.9 nC GS g V = 50V, I = 3.3A DS D 3.3 Gate-Source Charge Q nC gs 3.0 Gate-Drain Charge Q nC gd 4.4 Turn-On Delay Time t ns D(on) 2.3 Turn-On Rise Time t ns r V = 50V, V = 10V, DD GEN 13.9 Turn-Off Delay Time t ns R = 6.0, I = 3.3A D(off) GEN D Turn-Off Fall Time 3.4 ns t f Reverse Recovery Time 22.4 ns t rr I = 3.3A, dI/dt = 100A/s S Reverse Recovery Charge 19.7 nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. UIS in production with L = 1.43mH, T = +25C. J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. POWERDI is a registered trademark of Diodes Incorporated 2 of 6 August 2013 DMN10H170SFG Diodes Incorporated www.diodes.com Document number: DS36147 Rev. 4 - 2 NEW PRODUCT