DMN10H170SVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Low Gate Threshold Voltage D V R max (BR)DSS DS(ON) T = +25C A Low Input Capacitance 160m V = 10V 2.6A GS Fast Switching Speed 100V 200m V = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: TSOT26 resistance (R ) and yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Cas e Mat erial: Molded P las t ic, Green Molding Com pound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. Battery Operated Systems and Solid-State Relays Solderable per MIL-STD-202, Method 208 e3 Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Weight: 0.015 grams (Approximate) Memories, Transistors, etc. D TSOT26 D 1 6 D D 2 5 D G G 3 4 S S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMN10H170SVT-7 TSOT26 3,000/Tape & Reel DMN10H170SVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H170SVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 20 V GSS T = +25C Steady A 2.6 Continuous Drain Current (Note 6) V = 10V I A GS D State 2.1 T = +70C A 11.2 A Pulsed Drain Current (10s pulse, duty cycle 1%) I DM Maximum Body Diode Continuous Current (Note 6) 2.0 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units (Note 5) 1.2 Total Power Dissipation W PD (Note 6) 1.7 (Note 5) 101 Thermal Resistance, Junction to Ambient R JA (Note 6) 73 C/W (Note 6) Thermal Resistance, Junction to Case 15 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 100 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1.0 A V = 100V, V = 0V DSS DS GS Gate-Body Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1.0 2.0 3.0 V V = V , I = 250A GS(th) DS GS D 115 160 V = 10V, I = 5.0A GS D Static Drain-Source On-Resistance R m DS (ON) 124 200 V = 4.5V, I = 5.0A GS D Diode Forward Voltage 0.9 1.0 V V V = 0V, I = 10A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 1,167 C iss V = 25V, V = 0V, DS GS Output Capacitance 36 pF C oss f = 1.0MHz 25 Reverse Transfer Capacitance C rss 1.3 Gate Resistance R VDS = 0V, VGS = 0V, f = 1.0MHz g 4.9 Total Gate Charge (V = 4.5V) Q GS g 9.7 Total Gate Charge (V = 10V) Q GS g nC V = 80V, I = 12.8A DS D 2.0 Gate-Source Charge Q gs Gate-Drain Charge Q 2.0 gd Turn-On Delay Time 10 t D(on) Turn-On Rise Time 11 t V = 50V, V = 10V, r DD GS nS Turn-Off Delay Time 42 R = 25, I = 12.8A t G D D(off) Turn-Off Fall Time 12 t f Reverse Recovery Time 30 nS t rr V = 0V, I =12.8A, di/dt=100A/s GS S Reverse Recovery Charge 35 Q nC rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN10H170SVT February 2015 Diodes Incorporated www.diodes.com Document number: DS37196 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION