DMN10H170SVTQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max D Low Gate Threshold Voltage BV R Max DSS DS(ON) T = +25C A Low Input Capacitance 160m V = 10V 2.6A GS Fast Switching Speed 100V 200m V = 4.5V 2.3A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description PPAP Capable (Note 4) This new generation MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, DS(ON) making it ideal for high-efficiency power management applications. Mechanical Data Applications Case: TSOT26 Power Management Functions Battery Operated Systems and Solid-State Relays Cas e Mat erial: Molded P las t ic, Green Molding Com pound. Drivers: Relays, Solenoids, Lamps, Hammers, Displays, UL Flammability Classification Rating 94V-0 Memories, Transistors, etc. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish - Matte Tin Annealed over Copper Leadframe. Solderable per MIL-STD-202, Method 208 Weight: 0.015 grams (Approximate) TSOT26 D D 1 6 D D 2 5 D G G S 3 4 S Top View Top View Equivalent Circuit Pin-Out Ordering Information (Note 5) Part Number Case Packaging DMN10H170SVTQ-7 TSOT26 3,000/Tape & Reel DMN10H170SVTQ-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H170SVTQ Marking Information TSOT26 11N = Product Type Marking Code YM = Date Code Marking Y o r = Year (ex: C = 2015) 11N M = Month (ex: 9 = September) Date Code Key Year 2014 2015 2016 2017 2018 2019 2020 2021 Code B C D E F G H I Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 100 V V DSS Gate-Source Voltage 20 V V GSS Steady T = +25C 2.6 A A Continuous Drain Current (Note 7), VGS = 10V ID State 2.1 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle 1%) I 11.2 A DM Maximum Body Diode Continuous Current (Note 7) I 2.0 A S Thermal Characteristics Characteristic Symbol Value Unit (Note 6) 1.2 Total Power Dissipation P W D (Note 7) 1.7 (Note 6) 101 Thermal Resistance, Junction to Ambient R JA (Note 7) 73 C/W Thermal Resistance, Junction to Case (Note 7) 15 RJC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 2 of 8 DMN10H170SVTQ December 2015 Diodes Incorporated www.diodes.com Document number: DS38276 Rev. 2 - 2 NEW PRODUCT ADVANCED INFORMATION YM