DMN10H220LQ 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D max Low Input Capacitance BV R DSS DS(ON) max T = +25C A Fast Switching Speed Low Input/Output Leakage 1.6A 220m V = 10V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V 250m V = 4.5V 1.3A Halogen and Antimony Free. Green Device (Note 3) GS Qualified to AEC-Q101 Standards for High Reliability PPAP Capable (Note 4) Description and Applications Mechanical Data This MOSFET is designed to meet the stringent requirements of Automotive applications. It is qualified to AEC-Q101, supported by a Case: SOT23 PPAP and is ideal for use in: Case Material: Molded Plastic, Green Molding Compound, UL Flammability Classification Rating 94V-0 Load Switch Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Solderable per MIL-STD-202, Method 208 Weight: 0.009 grams (Approximate) SOT23 D D G G S S Top View Pin Configuration Equivalent Circuit Ordering Information (Note 5) Part Number Case Packaging DMN10H220LQ-7 SOT23 3,000/Tape & Reel DMN10H220LQ-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H220LQ Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 100 V DSS Gate-Source Voltage V 16 V GSS T = +25C 1.6 A (Note 7) I A D 1.3 T = +70C A Continuous Drain Current (Note 6) V = 10V GS T = +25C 1.4 A (Note 6) A I D 1.1 T = +70C A Maximum Continuous Body Diode Forward Current (Note 7) I 0.6 A S Pulsed Drain Current (10s pulse, duty cycle = 1%) I 8 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units 1.3 T = +25C A Total Power Dissipation (Note 7) W P D T = +70C 0.8 A (Note 6) 94 Thermal Resistance, Junction to Ambient C/W R JA (Note 7) 177 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 100V, V = 0V DSS DS GS Gate-Source Leakage 100 nA I V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 1 2.5 V V = V , I = 250A GS(TH) DS GS D 220 V = 10V, I = 1.6A GS D Static Drain-Source On-Resistance m R DS(ON) 250 V = 4.5V, I = 1.3A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance C 401 iss V = 25V, V = 0V DS GS Output Capacitance C 22 pF oss f = 1MHz Reverse Transfer Capacitance 17 C rss Gate Resistance 2.1 R V = 0V, V = 0V, f = 1MHz g DS GS 4.1 Total Gate Charge (V = 4.5V) Q GS g 8.3 Total Gate Charge (V = 10V) Q GS g nC V = 50V, I = 1.6A DS D Gate-Source Charge 1.5 Q gs Gate-Drain Charge Q 2 gd Turn-On Delay Time t 6.8 D(ON) Turn-On Rise Time t 8.2 R V = 50V, V = 4.5V, DS GS ns Turn-Off Delay Time t 7.9 R = 6.8, I = 1A D(OFF) G D Turn-Off Fall Time t 3.6 F Reverse Recovery Time 17 ns t RR I = 1.1A, di/dt =100A/s F Reverse Recovery Charge 9.8 nC Q RR Notes: 6. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 7. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 8 .Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN10H220LQ November 2016 Diodes Incorporated www.diodes.com Document number: DS39122 Rev. 2 - 2