DMN10H220LVT 100V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D V R (BR)DSS DS(on) max Low On-Resistance T = +25C A Fast Switching Speed 220m V = 10V 2.24A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 100V Halogen and Antimony Free. Green Device (Note 3) 2.10A 250m V = 4.5V GS Mechanical Data Description Case: TSOT26 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound resistance (R ) and yet maintain superior switching performance, DS(on) UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish Tin Finish Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.013 grams (Approximate) Power Management Functions Backlighting TSOT26 D 1 6 D D 2 5 D G 3 4 S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN10H220LVT-7 TSOT26 3,000/Tape & Reel DMN10H220LVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN10H220LVT Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 100 V V DSS Gate-Source Voltage V V 16 GSS T = +25C 2.24 A (Note 6) A I D 1.79 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C 1.87 A (Note 5) I A D 1.50 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1.50 A I S Pulsed Drain Current (10s pulse, duty cycle = 1%) 6.60 A I DM Thermal Characteristics ( TA = +25C unless otherwise specified.) Characteristic Symbol Value Units T = +25C 1.67 A Total Power Dissipation (Note 6) W P D 1.07 TA = +70C (Note 6) 75 Thermal Resistance, Junction to Ambient R C/W JA (Note 5) 108 Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 100 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 100V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 16V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 1.8 2.5 V V = V , I = 250A GS(th) DS GS D 172 220 V = 10V, I = 1.6A GS D Static Drain-Source On-Resistance m R DS (ON) 211 250 V = 4.5V, I = 1.3A GS D Diode Forward Voltage V 0.77 1.2 V V = 0V, I = 1.1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 401 C iss V = 25V, V = 0V DS GS Output Capacitance 22 pF C oss f = 1MHz Reverse Transfer Capacitance 17 C rss Gate Resistance 2.1 R V = 0V, V = 0V, f = 1MHz g DS GS 4.1 Total Gate Charge (V = 4.5V) Q GS g Total Gate Charge (V = 10V) Q 8.3 GS g nC VDS = 50V, ID = 1.6A Gate-Source Charge Q 1.5 gs Gate-Drain Charge Q 2 gd Turn-On Delay Time t 6.8 D(on) Turn-On Rise Time t 8.2 r V = 50V, V = 4.5V, DS GS ns Turn-Off Delay Time 7.9 R = 6.8I = 1A t G D D(off) Turn-Off Fall Time 3.6 t f Reverse Recovery Time 17 ns t rr I = 1.1A, di/dt =100A/s F Reverse Recovery Charge 9.8 nC Q rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1-inch square copper plate. 7 .Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 DMN10H220LVT April 2015 Diodes Incorporated www.diodes.com Document number: DS37958 Rev. 2 - 2 ADVANCE INFORMATION