DMN1150UFB N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I D V R (BR)DSS DS(on) max Very Low Gate Threshold Voltage V , 1.0V max GS(TH) T = +25C A Low Input Capacitance 1.41A 0.15 V = 4.5V GS Fast Switching Speed 12V 0.185 V = 2.5V 1.25A GS ESD Protected Gate 0.21 V = 1.8V 1.16A Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(on) Case: X1-DFN1006-3 performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound. UL applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Applications Terminals: Finish NiPdAu over Copper leadframe. Solderable e4 DC-DC Converters per MIL-STD-202, Method 208 Power management functions Weight: 0.001 grams (approximate) Drain X1-DFN1006-3 Body Diode Gate S D Gate G Protection Source Diode Bottom View Top View ESD PROTECTED Equivalent Circuit Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN1150UFB-7B X1-DFN1006-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1150UFB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 12 V DSS Gate-Source Voltage V 6 V GSS T = +25C Steady A 1.41 A Continuous Drain Current (Note 5) V = 4.5V I GS D State 1.15 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) 7 A I DM Maximum Body Diode continuous Current I 1 A S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 0.5 A Total Power Dissipation (Note 5) W P D T = +70C 0.3 A Steady state Thermal Resistance, Junction to Ambient (Note 5) 251 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 12 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 100 nA V = 12V, V = 0V J DSS DS GS Gate-Source Leakage I 1 A V = 6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 6) Gate Threshold Voltage V 0.35 1.0 V V = V , I = 250 A GS(th) DS GS D 150 V = 4.5V, I = 1A GS D Static Drain-Source On-Resistance 185 m R V = 2.5V, I = 1A DS (ON) GS D 210 V = 1.8V, I = 1A GS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 150mA SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance 106 pF C iss V =10V, V = 0V, DS GS 23 Output Capacitance C pF oss f = 1.0MHz 21 Reverse Transfer Capacitance C pF rss Gate resistance R 92.4 V = 0V, V = 0V, f = 1.0MHz g DS GS 1.5 Total Gate Charge (V = 4.5V) Q nC GS g 0.2 Gate-Source Charge Q nC V = 4V, I = 1A gs DS D Gate-Drain Charge Q 0.2 nC gd Turn-On Delay Time 4.1 ns t D(on) Turn-On Rise Time 34.5 ns t V = 4V,V = 6V, I = 1A r DD GS D Turn-Off Delay Time 57 ns R = 1 t G D(off) Turn-Off Fall Time 30 ns t f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 February 2013 DMN1150UFB Diodes Incorporated www.diodes.com Document number: DS36101 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT