DMN1260UFA 12V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.4mm Ultra Low Profile Package for Thin Application ID MAX V R 2 (BR)DSS DS(ON) max 0.48mm Package Footprint, 16 Times Smaller than SOT23 T = +25C A 366m V = 4.5V Low On-Resistance GS 520m V = 2.5V GS Low Input Capacitance 12V 0.5A 950m V = 1.8V GS ESD Protected Gate 1500m V =1.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(ON) Case: X2-DFN0806-3 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. Solderable Load Switch per MIL-STD-202, Method 208 e4 Power Management Functions Weight: 0.00043 grams (Approximate) Portable Power Adaptors D X2-DFN0806-3 G Gate Protection S Diode Top View Bottom View Internal Schematic Package Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN1260UFA-7B X2-DFN0806-3 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN1260UFA Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 12 DSS V Gate-Source Voltage V 8 GSS Continuous Drain Current (Note 5) I 0.5 A D Pulsed Drain Current (Note 6) 1.5 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.36 W D Thermal Resistance, Junction to Ambient (Note 5) 353 C/W R JA Operating and Storage Temperature Range T T -55 to 150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 12 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C 1 A J I V = 10V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(th) DS GS D 150 366 V = 4.5V, I = 200mA GS D 200 520 V = 2.5V, I = 100mA GS D Static Drain-Source On-Resistance m R DS(ON) 260 950 V = 1.8V, I = 50mA GS D 350 1500 V = 1.5V, I = 10mA GS D Diode Forward Voltage V 1.2 V V = 0V, I = 0.2A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 60 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 13.8 pF C oss f = 1MHz Reverse Transfer Capacitance 12.1 pF C rss Total Gate Charge 0.96 nC Q g 0.09 Gate-Source Charge Q nC V = 6V, V = 4.5V, I = 0.2A gs DS GS D 0.10 Gate-Drain Charge Q nC gd 7.4 Turn-On Delay Time t ns D(on) 18.8 Turn-On Rise Time t ns r V = 6V, V = 4.5V, DD GS 106.5 I = 0.2A, R = 6 Turn-Off Delay Time t ns D G D(off) 59.2 Turn-Off Fall Time t ns f Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on minimum recommended pad layout test board, 10s pulse duty cycle = 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN1260UFA February 2015 Diodes Incorporated www.diodes.com Document number: DS37122 Rev. 3 - 2