DMN15H310SE 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 100% Unclamped Inductive Switch (UIS) Test in Production I D V R max (BR)DSS DS(ON) Fast Switching Speed T = +25C A Low On-Resistance 310m V = 10V 2.0A GS 150V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 330m V = 5.0V 1.9A GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state Case: SOT223 resistance (R ) and yet maintain superior switching performance, DS(on) Case Material: Molded Plastic, Green Molding Compound making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 (Note 1) Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminals Connections: See Diagram Below Motor Control Terminals: Finish - Matte Tin Annealed over Copper Leadframe Transformer Driving Switch Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.112 grams (Approximate) Power Management Functions Uninterrupted Power Supply D SOT223 G S Equivalent Circuit Top View Pin Out - Top View Ordering Information (Note 4) Part Number Compliance Case Packaging DMN15H310SE-13 Standard SOT223 2,500 / Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN15H310SE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 150 V V DSS Gate-Source Voltage 20 V V GSS T = +25C 2.0 A A I D 1.6 T = +70C A Continuous Drain Current (Note 5) V = 10V GS T = +25C C 7.1 I A D 5.6 T = +70C C Pulsed Drain Current (10s pulse, duty cycle = 1%) 10 A I DM Maximum Body Diode Continuous Current 2.5 A I S Avalanche Energy (Note 6) L=26mH E 1.45 mJ AS Avalanche Current (Note 6) L=26mH I 0.2 A AS Peak Diode Recovery dv/dt (I 7.3A, di/dt 300A/ s) dv/dt 5 V/ns SD Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units TA = +25C 1.9 Total Power Dissipation (Note 5) P W D TA = +70C 1.2 Thermal Resistance, Junction to Ambient (Note 5) 64 C/W R JA Total Power Dissipation (Note 5) TC = +25C 23.5 W P D Thermal Resistance, Junction to Case (Note 5) 5.3 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMinTypMaxUnit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 150 V BV V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 120V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 1 2.2 3 V V = V , I = 250 A GS(th) DS GS D 178 310 V = 10V, I = 1.5A GS D Static Drain-Source On-Resistance R m DS (ON) 190 330 V = 5.0V, I = 1.0A GS D Diode Forward Voltage V 0.76 1.2 V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 405 iss V = 25V, V = 0V DS GS 40 Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance 20 C rss Gate Resistance 2.88 R V = 0V, V = 0V, f = 1.0MHz G DS GS 4.6 Total Gate Charge (V = 5.0V) Q GS g 8.7 Total Gate Charge (V = 10V) Q GS g nC V = 80V, I = 7.3A DS D 1.7 Gate-Source Charge Q gs 1.8 Gate-Drain Charge Q gd 3.5 Turn-On Delay Time t D(on) 7.8 Turn-On Rise Time t r V = 50V, V = 10V, DD GS nS 22 Turn-Off Delay Time t R = 25 , I = 7.3A D(off) G D Turn-Off Fall Time 11 t f Reverse Recovery Time 38 ns t I = 7.3A, di/dt = 100A/s rr F Reverse Recovery Charge 53 nC Q I = 7.3A, di/dt = 100A/s rr F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 6. Guaranteed by design. Not subject to product testing. 7. Short duration pulse test used to minimize self-heating effect. 2 of 7 January 2015 DMN15H310SE Diodes Incorporated www.diodes.com Datasheet number: DS37377 Rev. 3 - 2 ADVANCE INFORMATION