DMN15H310SK3 Green 150V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low R ensures on state losses are minimized DS(ON) I D V R max (BR)DSS DS(ON) Small form factor thermally efficient package enables higher T = +25C C density end products 310m V = 10V 8.3A GS 150V Lead-Free Finish RoHS Compliant (Notes 1 & 2) 330m V = 5.0V 8.0A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET features low on-resistance and fast Mechanical Data switching, making it ideal for high-efficiency power management Case: TO252 (DPAK) applications. Case Material: Molded Plastic, Green Molding Compound UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Matte Tin Annealed over Copper Leadframe Solderable per MIL-STD-202, Method 208 Weight: 0.33 grams (Approximate) D TO252 (DPAK) D G S Top View Top View Internal Schematic Pin Out Ordering Information (Note 4) Part Number Case Packaging DMN15H310SK3-13 TO252 (DPAK) 2,500/Tape & Reel Notes: 1. EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. All applicable RoHS exemptions applied. 2. See DMN15H310SK3 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 150 V DSS Gate-Source Voltage V 20 V GSS T = +25C C 8.3 Continuous Drain Current, V = 10V I A GS D 5.2 T = +100C C Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 10 A I DM Maximum Body Diode Continuous Current (note 5) 2.6 A I S Avalanche Current, L = 3mH (Note 6) 0.5 A I AS Avalanche Energy, L = 3mH (Note 6) E 0.36 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit 32 T = +25C C Total Power Dissipation P W D 12 T = +100C C Thermal Resistance, Junction to Ambient (Note 5) R 49 JA C/W Thermal Resistance, Junction to Case R 3.9 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 150 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 120V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 20V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 1 2.6 3 V V V = V , I = 250A GS(TH) DS GS D 180 310 V = 10V, I = 1.5A GS D Static Drain-Source On-Resistance 195 330 m R V = 5.0V, I = 1.0A DS(ON) GS D 242 350 V = 4.0V, I = 1.0A GS D Diode Forward Voltage V 0.8 1.2 V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C 405 iss V = 25V, V = 0V DS GS 40 Output Capacitance C pF oss f = 1.0MHz 20 Reverse Transfer Capacitance C rss 2.88 Gate Resistance R V = 0V, V = 0V, f = 1.0MHz G DS GS 4.6 Total Gate Charge (V = 5.0V) Q GS g 8.7 Total Gate Charge (V = 10V) Q GS g nC V = 80V, I = 7.3A DS D Gate-Source Charge 1.7 Q gs Gate-Drain Charge 1.8 Q gd 3.5 Turn-On Delay Time t D(ON) 7.8 Turn-On Rise Time t V = 50V, V = 10V, R DD GS ns 22 Turn-Off Delay Time t R = 25, I = 7.3A D(OFF) G D 11 Turn-Off Fall Time t F 38 Reverse Recovery Time t ns I = 7.3A, di/dt = 100A/s RR F Reverse Recovery Charge 53 nC Q I = 7.3A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 6. Guaranteed by design. Not subject to product testing. 7. Short duration pulse test used to minimize self-heating effect. 2 of 7 DMN15H310SK3 January 2016 Diodes Incorporated www.diodes.com Document number: DS38390 Rev. 3 - 2 NEW PRODUCT ADVANNCEWED P IRNOFDOURCMTA TION