DMN16M9UCA6 6 N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I CSP with Footprint 2.70mm 1.81mm S BV R SSS SS(ON) MAX T = +25C Height = 0.21mm for Low Profile A ESD Protection of Gate 6.5m V = 4.5V 16.6A GS 12V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 11.4m V = 2.5V 12.1A GS Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data Case: X3-DSN2718-6 (Type B) This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, Terminal Connections: See Diagram Below SS(ON) Moisture Sensitivity: Level 1 per J-STD-020 making it ideal for high efficiency power management applications. Terminals: Finish NiPdAu. Solderable per MIL-STD-202, Method 208 e4 Applications Battery Management Load Switch Battery Protection X3-DSN2718-6 (Type B) G1 G2 ESD PROTECTED Top View S1 S2 Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN16M9UCA6-7 X3-DSN2718-6 (Type B) 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN16M9UCA6 6 Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Source-Source Voltage 12 V V SSS Gate-Source Voltage 12 V V GSS Steady T = +25C 16.6 A Continuous Source Current (Note 5) V = 4.5V I A GS S State 13.2 T = +70C A T = +25C Steady A 12.1 A Continuous Source Current (Note 5) V = 2.5V I GS S State 9.7 T = +70C A Pulsed Source Current (Note 6) 80 A I SM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 7) P 1.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 7) R 124.6 C/W A JA Power Dissipation (Note 5) P 2.4 W D Thermal Resistance, Junction to Ambient T = +25C (Note 5) R 51.5 C/W A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Source-Source Breakdown Voltage 12 - - V BV V = 0V, I = 1mA SSS GS S - - 1 A Zero Gate Voltage Drain Current T = +25C I V = 10V, V = 0V J SSS SS GS Gate-Source Leakage - - 10 A I V = 8V, V =0V GSS GS SS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 - 1.3 V V V = 6V, I = 1mA GS(TH) SS S 2.3 5.0 6.5 V = 4.5V, I = 3A GS S 2.5 5.2 6.8 V = 4.0V, I = 3A GS S Static Source-Source On-Resistance R 2.6 5.3 6.9 m V = 3.8V, I = 3A SS(ON) GS S 2.8 5.5 8.8 V = 3.1V, I = 3A GS S 3.0 6.0 11.4 V = 2.5V, I = 3A GS S Diode Forward Voltage - 0.7 1.2 V V V = 0V, I = 3A SS GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance - 2360 - C iss V = 6V, V = 0V, SS GS Output Capacitance - 666 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 325 - C rss Total Gate Charge - 35.2 - Q g Gate-Source Charge Q - 7.0 - V = 6V, V = 4.5V, gs SS GS nC Gate-Drain Charge Q - 8.3 - I = 18A gd S Gate Charge at V Q - 4.2 - TH g(TH) Turn-On Delay Time t - 615 - D(ON) Turn-On Rise Time t - 1447 - R V = 6V, V = 4.5V, SS GS ns Turn-Off Delay Time - 2736 - I = 3A t S D(OFF) Turn-Off Fall Time - 3812 - t F 2 2 Notes: 5. Device mounted on FR-4 material with 1inch (6.45cm ), 2oz. (0.071mm thick) Cu. 6. Repetitive rating, pulse width limited by junction temperature. 7. Device mounted on FR-4 PCB with minimum recommended pad layout, single sided. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to production testing. 2 of 7 DMN16M9UCA6 July 2017 Diodes Incorporated www.diodes.com Document number: DS39737 Rev. 2 - 2