X-On Electronics has gained recognition as a prominent supplier of DMN2004DMK-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2004DMK-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2004DMK-7 Diodes Incorporated

DMN2004DMK-7 electronic component of Diodes Incorporated
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Part No.DMN2004DMK-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET Dual N-Channel
Datasheet: DMN2004DMK-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.495 ea
Line Total: USD 0.5 
Availability - 32620
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
439
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.3845
10 : USD 0.3102
30 : USD 0.2732
100 : USD 0.2454
500 : USD 0.2231

32620
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.495
10 : USD 0.3674
100 : USD 0.2497
500 : USD 0.1958
1000 : USD 0.1705
3000 : USD 0.1496
6000 : USD 0.1485

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Mounting Style
Package / Case
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Configuration
Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the DMN2004DMK-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2004DMK-7 and other electronic components in the MOSFETs category and beyond.

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DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See Diagram Low Input/Output Leakage Terminals: Finish Matte Tin annealed over Copper Ultra-Small Surface Mount Package leadframe. Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.015 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability G S D 2 1 1 SOT26 G S D 2 2 1 ESD PROTECTED TO 2kV Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2004DMK-7 SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2004DMK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 20 V VDSS Gate-Source Voltage 8 V V GSS Drain Current (Note 5) Steady T = +25C 540 A mA I D State 390 T = +85C A Pulsed Drain Current (Note 6) I 1.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 225 mW D Thermal Resistance, Junction to Ambient R 556 C/W JA Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 1 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 540mA GS D 0.4 0.55 Static Drain-Source On-Resistance R 0.5 0.70 V = 2.5V, I = 500mA DS(ON) GS D 0.7 0.9 V = 1.8V, I = 350mA GS D Forward Transfer Admittance 200 ms Y V = 10V, I = 0.2A FS DS D Diode Forward Voltage (Note 7) 0.5 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 150 pF C ISS V = 16V, V = 0V DS GS Output Capacitance C 25 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 20 pF RSS Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN2004DMK January 2016 Diodes Incorporated www.diodes.com Document number: DS30937 Rev. 5 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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