DMN2004DMK DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT26 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. Low Gate Threshold Voltage UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminal Connections: See Diagram Low Input/Output Leakage Terminals: Finish Matte Tin annealed over Copper Ultra-Small Surface Mount Package leadframe. Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.015 grams (Approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability G S D 2 1 1 SOT26 G S D 2 2 1 ESD PROTECTED TO 2kV Top View Top View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2004DMK-7 SOT26 3,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2004DMK Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage 20 V VDSS Gate-Source Voltage 8 V V GSS Drain Current (Note 5) Steady T = +25C 540 A mA I D State 390 T = +85C A Pulsed Drain Current (Note 6) I 1.5 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 225 mW D Thermal Resistance, Junction to Ambient R 556 C/W JA Operating and Storage Temperature Range T T -65 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 10A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 1 A V = 4.5V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 540mA GS D 0.4 0.55 Static Drain-Source On-Resistance R 0.5 0.70 V = 2.5V, I = 500mA DS(ON) GS D 0.7 0.9 V = 1.8V, I = 350mA GS D Forward Transfer Admittance 200 ms Y V = 10V, I = 0.2A FS DS D Diode Forward Voltage (Note 7) 0.5 1.4 V V V = 0V, I = 115mA SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 150 pF C ISS V = 16V, V = 0V DS GS Output Capacitance C 25 pF OSS f = 1.0MHz Reverse Transfer Capacitance C 20 pF RSS Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN2004DMK January 2016 Diodes Incorporated www.diodes.com Document number: DS30937 Rev. 5 - 2 NEW PRODUCT