DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Fast Switching Speed Flammability Classification Rating 94V-0 Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Halogen and Antimony Free. Green Device (Note 3) Solderable per MIL-STD-202, Method 208 ESD Protected Gate Ordering & Date Code Information: See Below For automotive applications requiring specific change Weight: 0.008 grams (Approximate) control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMN2005K Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 10 V GSS Drain Current Per Element (Note 5) Continuous 300 I mA D Pulsed (Note 6) 600 Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient R 357 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 100A DSS GS D Zero Gate Voltage Drain Current I 10 A V = 17V, V = 0V DSS DS GS Gate-Source Leakage I 5 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.53 0.9 V V = V , I = 100A GS(TH) DS GS D 0.55 3.5 V = 1.8V, I = 200mA GS D Static Drain-Source On-Resistance RDS(ON) 0. 1.7 VGS = 2.7V, ID = 200mA Forward Transfer Admittance 40 mS Yfs VDS = 3V, ID = 10mA Diode Forward Voltage VSD 0.7 1.4 V VGS = 0V, IS = 200mA DYNAMIC CHARACTERISTICS (Note 8) 36.0 Input Capacitance C pF iss V =16V, V = 0V, DS GS 5.7 Output Capacitance C pF oss f = 1.0MHz 4.2 Reverse Transfer Capacitance C pF rss 68 Gate Resistance R V = 0V, V = 0V g DS GS 0.5 Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS 0.07 Gate-Source Charge Q nC gs ID = 250mA Gate-Drain Charge 0.1 nC Qgd Turn-On Delay Time 4.06 ns tD(ON) VDD = 10V, VGS = 4.5V, Turn-On Rise Time 7.28 ns tR R = 47, R = 10, L G 13.74 Turn-Off Delay Time tD(OFF) ns ID = 200mA 10.54 Turn-Off Fall Time tF ns Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN2005K September 2020 Diodes Incorporated www.diodes.com Document number: DS30734 Rev. 10 - 2