X-On Electronics has gained recognition as a prominent supplier of DMN2005K-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2005K-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2005K-7 Diodes Incorporated

DMN2005K-7 electronic component of Diodes Incorporated
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Part No.DMN2005K-7
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: N-Channel 20 V 300mA (Ta) 350mW (Ta) Surface Mount SOT-23-3
Datasheet: DMN2005K-7 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
5: USD 0.1466 ea
Line Total: USD 0.73 
Availability - 3497
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ: 5  Multiples: 5
Pack Size: 5
Availability Price Quantity
3497
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 5
Multiples : 5
5 : USD 0.1466
50 : USD 0.12
150 : USD 0.1068
500 : USD 0.0968
3000 : USD 0.0888
6000 : USD 0.0849

22164
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 0.385
10 : USD 0.2651
100 : USD 0.1419
1000 : USD 0.132

   
Manufacturer
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RoHS - XON
Icon ROHS
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Minimum Operating Temperature
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Series
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Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
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We are delighted to provide the DMN2005K-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2005K-7 and other electronic components in the MOSFETs category and beyond.

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DMN2005K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT23 Very Low Gate Threshold Voltage, 0.9V Max. Case Material: Molded Plastic, Green Molding Compound. UL Fast Switching Speed Flammability Classification Rating 94V-0 Low Input/Output Leakage Moisture Sensitivity: Level 1 per J-STD-020 Ultra-Small Surface Mount Package Terminal Connections: See Diagram Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals: Finish Matte Tin Annealed over Copper Leadframe. e3 Halogen and Antimony Free. Green Device (Note 3) Solderable per MIL-STD-202, Method 208 ESD Protected Gate Ordering & Date Code Information: See Below For automotive applications requiring specific change Weight: 0.008 grams (Approximate) control (i.e. parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please contact us or your local Diodes representative. DMN2005K Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 10 V GSS Drain Current Per Element (Note 5) Continuous 300 I mA D Pulsed (Note 6) 600 Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 350 mW D Thermal Resistance, Junction to Ambient R 357 C/W JA Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 100A DSS GS D Zero Gate Voltage Drain Current I 10 A V = 17V, V = 0V DSS DS GS Gate-Source Leakage I 5 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.53 0.9 V V = V , I = 100A GS(TH) DS GS D 0.55 3.5 V = 1.8V, I = 200mA GS D Static Drain-Source On-Resistance RDS(ON) 0. 1.7 VGS = 2.7V, ID = 200mA Forward Transfer Admittance 40 mS Yfs VDS = 3V, ID = 10mA Diode Forward Voltage VSD 0.7 1.4 V VGS = 0V, IS = 200mA DYNAMIC CHARACTERISTICS (Note 8) 36.0 Input Capacitance C pF iss V =16V, V = 0V, DS GS 5.7 Output Capacitance C pF oss f = 1.0MHz 4.2 Reverse Transfer Capacitance C pF rss 68 Gate Resistance R V = 0V, V = 0V g DS GS 0.5 Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS 0.07 Gate-Source Charge Q nC gs ID = 250mA Gate-Drain Charge 0.1 nC Qgd Turn-On Delay Time 4.06 ns tD(ON) VDD = 10V, VGS = 4.5V, Turn-On Rise Time 7.28 ns tR R = 47, R = 10, L G 13.74 Turn-Off Delay Time tD(OFF) ns ID = 200mA 10.54 Turn-Off Fall Time tF ns Notes: 5. Device mounted on FR-4 PCB. 6. Pulse width 10S, Duty Cycle 1%. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 6 DMN2005K September 2020 Diodes Incorporated www.diodes.com Document number: DS30734 Rev. 10 - 2

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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