DMN2008LFU DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D MAX BV R Max DSS DS(ON) T = +25C A Low Gate Threshold Voltage 14.5A 5.4m V = 4.5V GS Low Input Capacitance 13.5A 6.2m V = 4.0V GS Fast Switching Speed 20V 13.0A 6.4m V = 3.7V GS ESD Protected Gate 12.0A 7.5m V = 3.1V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 10.5A 9.6m V = 2.5V GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description This new generation MOSFET is designed to minimize the on-state Case: U-DFN2030-6 (Type B) resistance (R ) , yet maintain superior switching performance, Case Material: Molded Plastic, Green Molding Compound. DS(ON) making it ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: NiPdAu over Copper Leadframe. Applications e4 Solderable per MIL-STD-202, Method 208 Power Management Functions Terminal Connections: See Diagram Below Battery Pack Weight: 0.012 grams (Approximate) Load Switch D1 D2 U-DFN2030-6 (Type B) G1 G2 ESD PROTECTED Gate Protection Gate Protection S1 S2 Diode Diode Bottom View Top View Equivalent Circuit Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMN2008LFU-7 U-DFN2030-6 (Type B) 3,000/Tape & Reel DMN2008LFU-13 U-DFN2030-6 (Type B) 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2008LFU Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 14.5 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 11.5 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 2.2 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 75 A I DM Avalanche Current (Note 7) L = 0.1mH 10 A I AS Avalanche Energy (Note 7) L = 0.1mH E 20 mJ AS Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.0 W T = +25C P A D Thermal Resistance, Junction to Ambient (Note 5) Steady State 123 C/W R JA Total Power Dissipation (Note 6) T = +25C P 1.7 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) 73 R JA C/W Thermal Resistance, Junction to Case 12 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 9.6V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.5 1.5 V V V = V , I = 250A GS(TH) DS GS D 3.5 4.7 5.4 V = 4.5V, I = 5.5A GS D 3.6 4.8 6.2 V = 4.0V, I = 5.5A GS D 4.9 Static Drain-Source On-Resistance R 3.7 6.4 m V = 3.7V, I = 5.5A DS(ON) GS D 5.1 3.8 7.5 V = 3.1V, I = 5.5A GS D 5.7 3.9 9.6 V = 2.5V, I = 5.5A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 11A SD GS S DYNAMIC CHARACTERISTICS (Note 9) 1,418 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 323 Output Capacitance pF C oss f = 1.0MHz Reverse Transfer Capacitance 106 pF C rss Gate Resistance 465 R V = 0V, V = 0V, f = 1MHz g DS GS 18.7 nC Total Gate Charge (V = 4.5V) Q GS g 42.3 nC Total Gate Charge (V = 10V) Q GS g V = 16V, I = 11A, DS D 3.2 Gate-Source Charge Q nC gs 4.4 Gate-Drain Charge Q nC gd 277 Turn-On Delay Time t ns D(ON) 653 Turn-On Rise Time t ns R V = 16V, I = 5.5A, DD D 1,989 Turn-Off Delay Time t ns V = 4.5V, R = 6 D(OFF) GS g 1,208 Turn-Off Fall Time ns t F Reverse Recovery Time 492 ns t RR I =11 A, di/dt = 100A/s F Reverse Recovery Charge 908 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. I and E ratings are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2008LFU September 2018 Diodes Incorporated www.diodes.com Document number: DS38625 Rev. 5 - 2