DMN2009LSS
SINGLE N-CHANNEL ENHANCEMENT MODE MOSFET
Product Summary Features
Low On-Resistance
I max
D
V R max
(BR)DSS DS(ON)
Low Gate Threshold Voltage
T = +25C
A
Low Input Capacitance
8m @ V = 10V
GS 12A
Fast Switching Speed
20V 9m @ V = 4.5V 10A Low Input/Output Leakage
GS
Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)
12m @ V = 2.5V 8A
GS
Halogen and Antimony Free. Green Device (Note 3)
Qualified to AEC-Q101 Standards for High Reliability
Description and Applications Mechanical Data
This MOSFET has been designed to minimize the on-state resistance Case: SO-8
(R ) and yet maintain superior switching performance, making it
DS(on) Case Material: Molded Plastic,Gree Molding Compound.
ideal for high efficiency power management applications.
UL Flammability Classification Rating 94V-0
Moisture Sensitivity: Level 1 per J-STD-020
Backlighting
Terminal Connections Indicator: See diagram
Power Management Functions
Terminals: Finish Matte Tin annealed over Copper leadframe.
DC-DC Converters Solderable per MIL-STD-202, Method 208
Weight: 0.074 grams (approximate)
D
SO-8
S D
S
D
G
S
D
TOP VIEW
G
D
S
Top View Equivalent circuit
Internal Schematic
Ordering Information (Note 4)
Part Number Case Packaging
DMN2009LSS-13 SO-8 2500/Tape & Reel
Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.
2. See
DMN2009LSS
Maximum Ratings (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Value Units
Drain-Source Voltage V 20 V
DSS
Gate-Source Voltage V 12 V
GSS
T = +25C 12
A
Drain Current (Note 5) Steady State I A
D
9.6
T = +70C
A
Pulsed Drain Current (Note 6) 42 A
I
DM
Thermal Characteristics
Characteristic Symbol Value Unit
Total Power Dissipation (Note 5) 2 W
P
D
Thermal Resistance, Junction to Ambient R 62.5 C/W
JA
Operating and Storage Temperature Range T T -55 to +150 C
J, STG
Electrical Characteristics (@T = +25C, unless otherwise specified.)
A
Characteristic Symbol Min Typ Max Unit Test Condition
OFF CHARACTERISTICS (Note 7)
Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A
DSS GS D
Zero Gate Voltage Drain Current I 1 A V = 20V, V = 0V
DSS DS GS
Gate-Source Leakage I 100 nA V = 12V, V = 0V
GSS GS DS
ON CHARACTERISTICS (Note 7)
Gate Threshold Voltage V 0.5 1.2 V V = V , I = 250 A
GS(th) DS GS D
V = 10V, I = 12A
8 GS D
Static Drain-Source On-Resistance 9 m
R V = 4.5V, I = 10A
DS (ON) GS D
12
V = 2.5V, I = 8A
GS D
Forward Transconductance g 27 S V = 5V, I = 6.5A
fs DS D
Diode Forward Voltage V 0.5 0.7 1.2 V V = 0V, I = 3A
SD GS S
DYNAMIC CHARACTERISTICS (Note 8)
Input Capacitance C 2555 pF
iss
Output Capacitance 523 pF
C V = 10V, V = 0V, f = 1.0MHz
oss DS GS
Reverse Transfer Capacitance 496 pF
C
rss
Gate Resistance 1.1
R V = 0V V = 0V, f = 1MHz
G GS DS
SWITCHING CHARACTERISTICS (Note 8)
28.9 V = 10V, V = 4.5V, I = 12A
DS GS D
Total Gate Charge Q
g
58.3
V = 10V, V = 10V, I = 12A
DS GS D
nC
Gate-Source Charge Q 3.7 V = 10V, V = 10V, I = 12A
gs DS GS D
Gate-Drain Charge Q 11.4 V = 10V, V = 10V, I = 12A
gd DS GS D
Notes: 5. Device mounted on 2 oz, FR-4 PCB, with R = 62.5C/W
JA
6. Pulse width 10S, Duty Cycle 1%.
7. Short duration pulse test used to minimize self-heating effect.
8. Guaranteed by design. Not subject to product testing.
2 of 5 October 2013
DMN2009LSS
Diodes Incorporated
www.diodes.com
Document number: DS31409 Rev. 7 - 2