1X DMN2011UFX DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = +25C A 9.5m V = 4.5V 12.2 A Fast Switching Speed GS 20V 13m V = 2.5V 10.4 A GS Low Input/Output Leakage ESD Protected Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data Case: V-DFN2050-4 This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(ON) UL Flammability Classification Rating 94V-0 ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper Leadframe. General Purpose Interfacing Switch e4 Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.01 grams (Approximate) G1 S1 V-DFN2050-4 D D D1/D2 G2 G1 ESD PROTECTED Gate Protection Gate Protection S2 Diode S1 Diode G2 S2 Top View Equivalent Circuit Bottom View Top View Pin-Out Ordering Information (Note 4) Part Number Case Packaging DMN2011UFX-7 V-DFN2050-4 3,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2011UFX Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 12.2 A A Continuous Drain Current (Note 6) V = 4.5V I GS D State 9.8 T = +70C A Steady T = +25C 10.4 A Continuous Drain Current (Note 6) V = 2.5V I A GS D State 8.3 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) 80 A I DM Maximum Body Diode Continuous Current 2.5 A I S Avalanche Current (Note 7) L = 0.1mH 18 A I AS Repetitive Avalanche Energy (Note 7) L = 0.1mH 17 mJ E AS Thermal Characteristics Characteristic Symbol Max Unit Power Dissipation (Note 6) 2.1 W P D 59.1 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 6) R A JA Thermal Resistance, Junction to Case (Note 6) 7.1 C/W R JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 16V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.3 1.0 V V = V , I = 250A GS(th) DS GS D 9.5 V = 4.5V, I = 10A GS D 10 V = 4.0V, I = 10A GS D Static Drain-Source On-Resistance R 10.5 m V = 3.5V, I = 9A DS(ON) GS D 11.5 VGS = 3.1V, ID = 9A 13 V = 2.5V, I = 8A GS D Diode Forward Voltage 1.2 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 2,248 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 295 pF C oss f = 1.0MHz Reverse Transfer Capacitance 265 pF C rss Gate Resistance 1.5 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (V = 4.5V) Q 24 nC GS g Total Gate Charge (V = 10V) Q 56 nC GS g V = 10V, I = 8.5A DS D Gate-Source Charge Q 3.5 nC gs Gate-Drain Charge 5.1 nC Qgd Turn-On Delay Time 3.6 ns t D(on) Turn-On Rise Time 2.6 ns t V = 10V, I = 8.5A r DS D Turn-Off Delay Time 21.6 ns V = 4.5V, R = 1.8 t GS G D(off) Turn-Off Fall Time 13.5 ns t f Body Diode Reverse Recovery Time 12.8 nS t I = 8.5A, dI/dt = 210A/s rr F Body Diode Reverse Recovery Charge Q 6.9 nC I = 8.5A, dI/dt = 210A/s rr F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C. AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 7 August 2015 DMN2011UFX www.diodes.com Diodes Incorporated Document number: DS37250 Rev. 3 - 2 ADVANCED INFORMATION