DMN2014LHAB DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low On-Resistance D BV R Max DSS DS(ON) T = +25C A Low Gate Threshold Voltage 9.0A 13m VGS = 4.5V Low Input Capacitance 8.7A 14m V = 4.0V GS Fast Switching Speed 20V 8.0A 17m V = 3.1V GS ESD Protected Gate 6.7A 18m V = 2.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 6.3A 28m V = 1.8V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Case: U-DFN2030-6 (Type B) performance, making it ideal for high efficiency power management Case Material: Molded Plastic, Green Molding Compound UL applications. Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Below Weight: 0.012 grams (Approximate) Power Management Functions Battery Pack Load Switch D2 D1 U-DFN2030-6 (Type B) G1 G2 Gate Protection Gate Protection S1 Diode S2 Diode ESD PROTECTED TO 2kV Equivalent Circuit Top View Bottom View Ordering Information (Note 4) Part Number Case Packaging DMN2014LHAB-7 U-DFN2030-6 (Type B) 3,000 / Tape & Reel DMN2014LHAB-13 U-DFN2030-6 (Type B) 10,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2014LHAB Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 9.0 A I A D State 7.1 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 9.3 A t < 10s A I D 7.4 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle = 1% ) 45 A I DM Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.8 A Total Power Dissipation (Note 5) W P D T = +70C 0.5 A Steady State 157 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 148 T = +25C 1.7 A Total Power Dissipation (Note 6) W P D T = +70C 1.1 A Steady State 73.7 Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 68 C/W Thermal Resistance, Junction to Case R 9.4 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.3 0.71 1.1 V V V = V , I = 250A GS(TH) DS GS D 10 13 V = 4.5V, I = 4.0A GS D 11 14 V = 4.0V, I = 4.0A GS D Static Drain-Source On-Resistance R 12 17 m V = 3.1V, I = 4.0A DS(ON) GS D 13 18 V = 2.5V, I = 4.0A GS D 19 28 V = 1.8V, I = 3.5A GS D Forward Transfer Admittance 25 S Yfs VDS = 5V, ID = 6A Diode Forward Voltage 0.75 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 1550 Input Capacitance pF C iss V = 10V, V = 0V, DS GS Output Capacitance 166 pF C oss f = 1.0MHz Reverse Transfer Capacitance 145 pF C rss Gate Resistance 1.37 R V = 0V, V = 0V, f = 1MHz g DS GS 8.4 nC Total Gate Charge (V = 2.5V) Q GS g 16 Total Gate Charge (V = 4.5V) Q nC GS g V = 10V, I = 6A DS D 2.3 Gate-Source Charge Q nC gs 2.5 Gate-Drain Charge Q nC gd 6.9 Turn-On Delay Time t ns D(ON) 15.5 Turn-On Rise Time ns tR V = 10V, R = 1.7, DD L 40.9 Turn-Off Delay Time ns V = 5.0V, R = 3 t GS g D(OFF) Turn-Off Fall Time 12 ns t F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper pad 7. Repetitive rating, pulse width limited by junction temperature 8. Guaranteed by design. Not subject to product testing 2 of 6 DMN2014LHAB February 2016 Diodes Incorporated www.diodes.com Document number: DS36441 Rev. 3 - 2 ADVANCE INFORMATION