DMN2015UFDE 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications 2 PCB footprint of 4mm I D max V R Package (BR)DSS DS(ON) max T = +25C A Low Gate Threshold Voltage Low On-Resistance 10.5A 11.6m V = 4.5V GS U-DFN2020-6 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V Type E 9.4A 15m V = 2.5V GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: U-DFN2020-6 Type E state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. performance, making it ideal for high efficiency power management UL Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable per MIL-STD-202, Method 208 Applications Weight: 0.0065 grams (approximate) General Purpose Interfacing Switch Drain Power Management Functions U - D FN 2020 -6 Type E Pin1 Gate Source Bottom View Equivalent Circuit Bottom View Pin Out Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMN2015UFDE-7 N4 7 3,000 DMN2015UFDE-13 N4 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2015UFDE Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 10.5 A I A D State 8.5 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 12.5 A t<10s A I D 10.0 T = +70C A Steady T = +25C 9.4 A I A D State 7.5 TA = +70C Continuous Drain Current (Note 6) V = 2.5V GS T = +25C 11.2 A t<10s A I D 8.8 T = +70C A Pulsed Drain Current (10s pulse, duty cycle = 1%) I 80 A DM Maximum Body Diode Continuous Current I 2.5 A S Thermal Characteristics Characteristic Symbol Value Units T = +25C 0.66 A Total Power Dissipation (Note 5) W P D T = +70C 0.42 A Steady state 189 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 132 T = +25C 2.03 A Total Power Dissipation (Note 6) W P D T = +70C 1.31 A Steady state 61 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 43 C/W Thermal Resistance, Junction to Case (Note 6) 9.3 R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 16V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA IGSS VGS = 12V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 1.1 V VGS(th) VDS = VGS, ID = 250A 9.3 11.6 V = 4.5V, I = 8.5A GS D 11.4 15 V = 2.5V, I = 8.5A GS D Static Drain-Source On-Resistance R m DS (ON) 17 30 V = 1.8V, I = 5A GS D 24 50 V = 1.5V, I = 3A GS D Forward Transfer Admittance Y 11.3 S V = 10V, I = 8.5A fs DS D Diode Forward Voltage V 1.2 V V = 0V, I = 8.5A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 1779 Input Capacitance C pF iss V = 10V, V = 0V, DS GS 175 Output Capacitance C pF oss f = 1.0MHz 154 Reverse Transfer Capacitance C pF rss 0.94 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 19.7 nC Total Gate Charge (V = 4.5V) Q GS g 45.6 nC Total Gate Charge (V = 10V) Q GS g V = 10V, I = 8.5A DS D Gate-Source Charge 2.9 nC Q gs Gate-Drain Charge 3.8 nC Q gd Turn-On Delay Time 7.4 ns t D(on) 16.8 Turn-On Rise Time t ns V = 10V, I = 8.5A r DS D 43.6 Turn-Off Delay Time t ns V = 4.5V, R = 1.8 D(off) GS G 10.9 Turn-Off Fall Time t ns f 8.6 Reverse Recovery Time T ns rr I = 8.5A, di/dt = 210A/s F 3.7 Reverse Recovery Charge nC Qrr Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 December 2014 DMN2015UFDE www.diodes.com Diodes Incorporated Datasheet number: DS35560 Rev. 9 - 2 ADVANCE INFORMATION