DMN2016LFG DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance Low Gate Threshold Voltage I D Low Input Capacitance V R (BR)DSS DS(on) max T = 25C Fast Switching Speed A ESD Protected Gate 18m V = 4.5V 5.2A GS Lead, Halogen, and Antimony Free, RoHS Compliant (Note 1) 20V Gree Device (Note 2) 30m V = 1.8V 4.0A GS Qualified to AEC-Q101 Standards for High Reliability Description and Applications Mechanical Data This new generation MOSFET has been designed to minimize the on- Case: U-DFN3030-8 state resistance (R ) and yet maintain superior switching DS(on) Case Material: Molded Plastic, Green Molding Compound. UL performance, making it ideal for high efficiency power management Flammability Classification Rating 94V-0 applications. Moisture Sensitivity: Level 1 per J-STD-020 Power management functions Terminal Connections: See Diagram Below Battery Pack Weight: 0.0172 grams (approximate) Load Switch 56 7 8 8 7 6 5 U-DFN3030-8 D1/D2 G2 S2 G1 S1 43 2 1 1 2 3 4 ESD PROTECTED TO 2kV Top View Bottom View Bottom View Top View Pin Configuration Equivalent Circuit Ordering Information (Note 6) Part Number Case Packaging DMN2016LFG-7 U-DFN3030-8 3000 / Tape & Reel Notes: 1. No purposefully added lead. Halogen and Antimony Free. 2. Diodes Inc.s Green policy can be found on our website at DMN2016LFG Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = 25C 5.2 A Continuous Drain Current (Note 4) A I D State 4.1 T = 70C A Pulsed Drain Current (10s pulse, duty cycle = 1% ) I 30 A DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 4) 0.77 W P D 169 C/W Thermal Resistance, Junction to Ambient T = 25C (Note 4) R A JA Thermal Resistance, Junction to Case T = 25C (Note 4) R 15.8 C/W A JC Operating and Storage Temperature Range T , T -55 to +150 C J STG Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250A DSS GS D 8 Gate-Source Breakdown Voltage BV - - V V = 0V, I = 250 A GSO DS G Zero Gate Voltage Drain Current T = 25C I - - 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage - - 10 A I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage 0.4 0.71 1.1 V V V = V , I = 250 A GS(th) DS GS D 13 18 V = 4.5V, I = 6A GS D 13.5 19 V = 4.0V, I = 6A GS D Static Drain-Source On-Resistance - 14 20.5 m R V = 3.1V, I = 6A DS (ON) GS D 15 22 V = 2.5V, I = 6A GS D 21 30 V = 1.8V, I = 6A GS D Forward Transfer Admittance Y - 25 - S V = 5V, I = 6A fs DS D Diode Forward Voltage V - 0.75 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 6) - 1472 - Input Capacitance C pF iss V = 10V, V = 0V, DS GS - 311 - Output Capacitance C pF oss f = 1.0MHz Reverse Transfer Capacitance - 141 - pF C rss Gate Resistance - 1.46 - R V =0V, V = 0V, f = 1MHz g DS GS Total Gate Charge - 16.0 - nC Q g V = 4.5V, V = 10V, GS DS - 36.6 - Gate-Source Charge Q nC gs I = 6A D - 2.1 - Gate-Drain Charge Q nC gd - 2.6 - Turn-On Delay Time t ns D(on) - 13.2 - Turn-On Rise Time t ns r V = 10V, V = 5V, DD GS - 84.5 - Turn-Off Delay Time t ns R = 3 , R = 1.7 D(off) GEN L - 46.8 - Turn-Off Fall Time t ns f Notes: 4. Device mounted on FR-4 PCB, with minimum recommended pad layout. 5. Repetitive rating, pulse width limited by junction temperature 6. Guaranteed by design. Not subject to product testing 2 of 6 January 2012 DMN2016LFG Diodes Incorporated www.diodes.com Document number: DS32053 Rev. 3 - 2 ADVANCE INFORMATION