DMN2019UTS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Input Capacitance T = 25C A Fast Switching Speed 18.5m V = 10V 5.4 A GS ESD Protected up to 2KV 21m V = 4.5V GS 5.0 A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 24m V = 2.5V 4.6 A GS Halogen and Antimony Free. Green Device (Note 3) 31m V = 1.8V 3.5 A GS Qualified to AEC-Q101 standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(on) performance, making it ideal for high efficiency power management Case: TSSOP-8 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram Below Power management functions Weight: 0.039 grams (approximate) Load Switch DD TSSOP-8 1 8 D D G1 G2 S1 S2 2 7 S1 S2 3 6 G1 G2 4 5 S1 S2 N-Channel N-Channel Top View Top View ES D PROTECTED TO 2kV Bottom View Pin Configuration Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2019UTS-13 TSSOP-8 2500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2019UTS Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady 5.4 A Continuous Drain Current (Note 5) V = 10V I A GS D State 4.3 T = +70C A T = +25C Steady 4.6 A A Continuous Drain Current (Note 5) V = 2.5V I GS D State 3.7 T = +70C A Steady Continuous Body Diode Forward Current (Note 5) T = +25C I 0.9 A S A Stat Pulsed Drain Current (Note 5) 10 s pulse, duty cycle = 1% I 30 A DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 0.78 W D Thermal Resistance, Junction to Ambient (Note 5) R 161 C/W JA Thermal Resistance, Junction to Case (Note 5) 26 C/W R JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 6) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage I - - 10 A V = 10V, V = 0V GSS GS DS Gate-Source Breakdown Voltage 12 - - V BV V = 0V, I = 250A SGS DS G ON CHARACTERISTICS (Note 6) Gate Threshold Voltage 0.35 - 0.95 V V V = V , I = 250 A GS(th) DS GS D 15.5 18.5 V = 10V, I = 7A GS D - 16.5 21 V = 4.5V, I = 7A GS D - 17 21.5 V = 4.0V, I = 7A - GS D Static Drain-Source On-Resistance R - 17.5 22.5 m V = 3.6V, I = 6.5A DS (ON) GS D - 18 23 V = 3.1V, I = 6.5A GS D - 19 24 V = 2.5V, I = 5.5A GS D - 24 31 V = 1.8V, I = 3.5A GS D Forward Transfer Admittance Y - 13 - S V = 5V, I = 5A fs DS D Diode Forward Voltage V - 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 7) Input Capacitance C - 143 - pF iss V = 10V, V = 0V, DS GS Output Capacitance - 74 - pF C oss f = 1.0MHz Reverse Transfer Capacitance - 29 - pF C rss Gate Resistance - 202 - R V = 0V, V = 0V, f = 1MHz g DS GS 8.8 Total Gate Charge Q - - nC g V = 4.5V, V = 10V, GS DS 1.4 Gate-Source Charge Q - - nC gs I = 6.5A D 3.0 Gate-Drain Charge Q - - nC gd 53 Turn-On Delay Time t - - ns D(on) 78 Turn-On Rise Time t - - ns r V = 10V, V = 4.5V, DD GS 562 Turn-Off Delay Time t - - ns R = 10 , R = 6 D(off) L G Turn-Off Fall Time t - 234 - ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Short duration pulse test used to minimize self-heating effect. 7. Guaranteed by design. Not subject to product testing. 2 of 6 December 2012 DMN2019UTS Diodes Incorporated www.diodes.com Document number: DS35556 Rev. 2 - 2 NEW PRODUCT