DMN2020LSN N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SC-59 Low Input Capacitance Case Material - Molded Plastic,Gree Molding Compound. UL Flammability Classification Rating 94V-0 Fast Switching Speed Moisture Sensitivity: Level 1 per J-STD-020 Low Input/Output Leakage Terminals: Finish Matte Tin annealed over Copper leadframe. ESD Protected Up To 2KV Solderable per MIL-STD-202, Method 208 Lead Free By Design/RoHS Compliant (Note 1) Terminal Connections: See Diagram Gree Device (Note 2) Marking Information: See Page 2 Qualified to AEC-Q101 Standards for High Reliability Ordering Information: See Page 2 Weight: 0.014 grams (approximate) SC-59 Drain D Gate G S Gate Protection Source TOP VIEW Diode ESD PROTECTED TO 2kV TOP VIEW Pin Out Configuration EQUIVALENT CIRCUIT Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage Continuous V 12 V GSS T = 25C Steady A 6.9 Continuous Drain Current A I D State 4.5 T = 85C A Pulsed Drain Current (Note 4) 30 A I DM Thermal Characteristics Characteristic Symbol Value Units Power Dissipation (Note 3) P 0.61 W D 204 Thermal Resistance, Junction to Ambient T = 25C (Note 3) R C /W A JA Operating and Storage Temperature Range -55 to +150 T , T C J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree Policy can be found on our website at DMN2020LSN Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = 25C I - - 1.0 V = 20V, V = 0V J DSS A DS GS Gate-Source Leakage I - - 10 V = 12V, V = 0V GSS A GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage V 0.5 1.0 1.5 V V = V , I = 250 A GS(th) DS GS D V = 4.5V, I = 9.4A 13 20 GS D Static Drain-Source On-Resistance R - m DS (ON) 18 28 V = 2.5V, I = 8.3A GS D Forward Transfer Admittance Y - 16 - S V = 5V, I = 9.4A fs DS D Diode Forward Voltage V - 0.7 1.2 V V = 0V, I = 1.3A SD GS S DYNAMIC CHARACTERISTICS (Note 6) Input Capacitance C - 1149 - pF iss V = 10V, V = 0V, DS GS Output Capacitance C - 157 - pF oss f = 1.0MHz Reverse Transfer Capacitance C - 142 - pF rss Gate Resistance R - 1.51 - V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q - 11.6 - nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q - 2.7 - nC gs I = 9.4A D Gate-Drain Charge Q - 3.4 - nC gd Turn-On Delay Time t - 11.67 - ns D(on) Turn-On Rise Time t - 12.49 - ns V = 10V, V = 4.5V, r DD GS Turn-Off Delay Time t - 35.89 - ns R = 6 , I = 1A D(off) GEN D Turn-Off Fall Time t - 12.33 - ns f Notes: 5. Short duration pulse test used to minimize self-heating effect. 6. Guaranteed by design. Not subject to production testing. 20 20 V = 8.0V GS V = 4.5V GS V = 3.0V GS V = 10V 15 15 DS V = 2.5V GS V = 2.0V GS 10 10 T = 150C A T = 125C 5 5 A V = 1.8V GS T = 85C A T = 25C A T = -55C V = 1.5V A GS 0 0 0 0.5 1 1.5 2 2.5 3 0 0.5 1 1.5 2 V , DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 6 August 2011 DMN2020LSN Diodes Incorporated www.diodes.com Document number: DS31946 Rev. 3 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D