DMN2020UFCL 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I max Typical off board profile of 0.5mm - ideally suited for thin D V R max (BR)DSS DS(ON) T = +25C applications A Low R minimizes conduction losses 9 A DS(ON) 14 m V = 4.5V GS 20V 2 PCB footprint of 2.56mm 7.5 A 20 m V = 2.5V GS ESD Protected Gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Qualified to AEC-Q101 standards for High Reliability This new generation MOSFET has been designed to minimize the on- state resistance (R ) and yet maintain superior switching DS(ON) Mechanical Data performance, making it ideal for high efficiency power management Case: X1-DFN1616-6 Type E applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Lead Free Plating (NiPdAu Finish over Copper leadframe). Power management functions e4 Terminals: Solderable per MIL-STD-202, Method 208 Load Switch Weight: 0.04 grams (approximate) X1-DFN1616-6 Type E Pin 1 ESD PROTECTED Top View Pin-Out Top View Bottom View Device Symbol Ordering Information (Note 4) Product Reel size (inches) Tape width (mm) Quantity per reel DMN2020UFCL-7 7 8 3,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2020UFCL Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 10 V GSS T = +25C 9 Steady A Continuous Drain Current (Note 6) V = 4.5V A I GS D State 7.1 T = +70C A Pulsed Drain Current (Note 7) 45 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Power Dissipation (Note 5) 0.61 W P D 205 C/W Thermal Resistance, Junction to Ambient T = +25C (Note 5) R A JA Power Dissipation (Note 6) P 2.0 W D Thermal Resistance, Junction to Ambient T = +25C (Note 6) R 62 C/W A JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics N-CHANNEL Q1 ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C 1.0 A J I V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage 0.4 0.9 V V V = V , I = 250 A GS(th) DS GS D V = 4.5V, I = 9A GS D 10 14 Static Drain-Source On-Resistance R 12 20 m V = 2.5V, I = 7.5A DS (ON) GS D 14 26 V = 1.8V, I = 7A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.6A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1788 pF C iss V = 10V, V = 0V, DS GS Output Capacitance C 162 pF oss f = 1.0MHz Reverse Transfer Capacitance C 150 pF rss Gate Resistance 1.36 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 21.5 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 2.2 nC gs I = 3A D Gate-Drain Charge 2.3 nC Q gd Turn-On Delay Time t 3.8 ns D(on) Turn-On Rise Time t 5.7 ns r V = 10V, V = 4.5V, I = 4A DD GS D Turn-Off Delay Time 33 ns R = 2 t G D(off) Turn-Off Fall Time t 6.8 ns f Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Repetitive rating, pulse width limited by junction temperature. 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 December 2013 DMN2020UFCL Diodes Incorporated www.diodes.com Document number: DS36541 Rev. 3 2 ADVANCE INFORMATION