DMN2022UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features 0.6mm profile ideal for low profile applications I max D 2 V R max (BR)DSS DS(ON) PCB footprint of 4mm T = +25C A Low Gate Threshold Voltage 22m V = 4.5V 7.9A GS Fast Switching Speed ESD Protected Gate 26m V = 2.5V 7.2A GS 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 36m V = 1.8V 6.1A GS Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability 50m V = 1.5V GS 5.2A Mechanical Data Description This MOSFET has been designed to minimize the on-state resistance Case: U-DFN2020-6 TYPE F (R ) and yet maintain superior switching performance, making it Case Material: Molded Plastic, Green Molding Compound. DS(on) ideal for high efficiency power management applications. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish NiPdAu over Copper leadframe. Solderable Applications per MIL-STD-202, Method 208 Weight: 0.0065 grams (approximate) Battery Management Application Power Management Functions DC-DC Converters U-DFN2020-6 D TYPE F G Gate Protection ESD PROTECTED S Diode Pin Out Top View Bottom View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Marking Reel size (inches) Quantity per reel DMN2022UFDF-7 NC 7 3,000 DMN2022UFDF-13 NC 13 10,000 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2022UFDF Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 7.9 A I A D State 6.3 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 9.4 A t<5s A I D 7.5 T = +70C A Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 40 A DM Continuous Source-Drain Diode Current T = +25C 2 A A I S Avalanche Current (Note 7) L = 0.1mH I 12 A AS Avalanche Energy (Note 7) L = 0.1mH E 8 mJ AS Thermal Characteristics Characteristic Symbol Value Units 0.66 T = +25C A Total Power Dissipation (Note 5) P W D 0.42 T = +70C A Steady state 188 Thermal Resistance, Junction to Ambient (Note 5) R C/W JA t<5s 135 2.03 T = +25C A Total Power Dissipation (Note 6) P W D 1.31 T = +70C A Steady state 60 Thermal Resistance, Junction to Ambient (Note 6) R JA t<5s 43 C/W Thermal Resistance, Junction to Case (Note 6) Steady state 8.3 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.5 1.0 V V = V , I = 250A GS(th) DS GS D 15 22 V = 4.5V, I = 4A GS D 18 26 V = 2.5V, I = 4A GS D Static Drain-Source On-Resistance R m DS (ON) 24 36 V = 1.8V, I = 4A GS D 35 50 V = 1.5V, I = 4A GS D Forward Transfer Admittance 18 S Y V = 5V, I = 12A fs DS D Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 5A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 907 C iss V = 10V, V = 0V, DS GS Output Capacitance 98 pF C oss f = 1.0MHz 38 Reverse Transfer Capacitance C rss 194 Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS 9.8 Total Gate Charge (V = 4.5V) Q GS g 18 Total Gate Charge (V = 8V) Q GS g nC V = 10V, I = 6.5A DS D 1.5 Gate-Source Charge Q gs Gate-Drain Charge 1.8 Q gd Turn-On Delay Time 56 t D(on) Turn-On Rise Time 87 t V = 10V, V = 4.5V, r DS GS ns Turn-Off Delay Time 632 R = 6 , R = 10 ,I = 1A t G L D D(off) Turn-Off Fall Time 239 t f Reverse Recovery Time t 143 ns I = 4A, di/dt = 100A/s rr F Reverse Recovery Charge Q - 136 nC I = 4A, di/dt = 100A/s rr F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C AS AS J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 April 2014 DMN2022UFDF Diodes Incorporated www.diodes.com Datasheet number: DS36744 Rev. 1 - 2