X-On Electronics has gained recognition as a prominent supplier of DMN2024UFDF-7 MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2024UFDF-7 MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2024UFDF-7 Diodes Incorporated

Name: DMN2024UFDF-7
Brand: Diodes Incorporated
SKU: DMN2024UFDF7_Diodes_Incorporated
Availability: InStock
Rating: 5 (11 reviews)

DMN2024UFDF-7 electronic component of Diodes Incorporated

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See Product Specifications

Part No.	DMN2024UFDF-7
Manufacturer:	Diodes Incorporated
Category:	MOSFETs
Description:	MOSFET MOSFET BVDSS: 8V-24V
Datasheet:	DMN2024UFDF-7 Datasheet (PDF)
	Large This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges

Price (USD)

1: USD 0.5175 ea
Line Total: USD 0.52

Availability - 3837
Ship by Wed. 30 Apr to Fri. 02 May

MOQ: 1 Multiples: 1
Pack Size: 1

DMN2024UFDF-7 More Buying Options & Price Grid(s)

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Availability Price Buy Price Quantity

3837

Ship by Wed. 30 Apr to Fri. 02 May

MOQ : 1
Multiples : 1

1 : USD 0.5175
10 : USD 0.3487
100 : USD 0.1944
500 : USD 0.1573
1000 : USD 0.1441
3000 : USD 0.1254
6000 : USD 0.1089
9000 : USD 0.0979

Specifications

Manufacturer

Diodes Incorporated Diodes Incorporated

Product Category

MOSFETs MOSFETs

Id - Continuous Drain Current

7.1 A 7.1 A

Vds - Drain-Source Breakdown Voltage

20 V 20 V

Rds On - Drain-Source Resistance

22 mOhms 22 mOhms

Transistor Polarity

N - Channel N - Channel

Vgs th - Gate-Source Threshold Voltage

0.5 V 0.5 V

Minimum Operating Temperature

- 55 C - 55 C

Maximum Operating Temperature

+ 150 C + 150 C

Pd - Power Dissipation

1.67 W 1.67 W

Mounting Style

Smd/Smt Smd/Smt

Package / Case

U - DFN2020 - 6 U - DFN2020 - 6

Packaging

Cut Tape Cut Tape

Technology

Si Si

Number of Channels

1 Channel 1 Channel

Vgs - Gate-Source Voltage

10 V 10 V

Qg - Gate Charge

0.9 nC 0.9 nC

Channel Mode

Enhancement Enhancement

Configuration

Single Single

Transistor Type

1 N - Channel 1 N - Channel

Brand

Diodes Incorporated Diodes Incorporated

Fall Time

245 ns 245 ns

Product Type

Mosfet Mosfet

Rise Time

1024 ns 1024 ns

Factory Pack Quantity :

3000 3000

Subcategory

Mosfets Mosfets

Typical Turn-Off Delay Time

434 ns 434 ns

Typical Turn-On Delay Time

140 ns 140 ns

Notes:- Show Stocked Products With Similar Attributes.

DMN2024UFDF-7 Alternative Parts

We are delighted to provide the DMN2024UFDF-7 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2024UFDF-7 and other electronic components in the MOSFETs category and beyond.

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Additional Infomation About Product

DMN2024UFDF 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Max 0.6mm ProfileIdeal for Low Profile Applications D BVDSS RDS(ON) Max 2 TA = +25C PCB Footprint of 4mm Low Gate Threshold Voltage 22m VGS = 4.5V 7.1A Fast Switching Speed 26m VGS = 2.5V 6.5A 20V ESD Protected Gate 36m V = 1.8V 5.5A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 50m V = 1.5V 4.7A GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q100/101/200, PPAP Description capable, and manufactured in IATF 16949 certified facilities), This MOSFET is designed to minimize the on-state resistance please contact us or your local Diodes representative. (R ) yet maintain superior switching performance, which makes it DMN2024UFDF Marking Information Site1 OA = Product Type Marking Code YM = Date Code Marking OA Y = Year (ex: H = 2020) M = Month (ex: 9 = September) Date Code Key Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code F G H I J K L M N O P R Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec Code 1 2 3 4 5 6 7 8 9 O N D Site 2 OA = Product Type Marking Code YWX = Date Code Marking OA Y = Year (ex: 0 = 2020) W = Week (ex: a = Week 27 z Represents Week 52 and 53) X = Internal Code (ex: U = Monday) Date Code Key Year 2018 2019 2020 2021 2022 2023 2024 2025 2026 2027 2028 2029 Code 8 9 0 1 2 3 4 5 6 7 8 9 Week 1-26 27-52 53 Code A-Z a-z z Internal Code Sun Mon Tue Wed Thu Fri Sat Code T U V W X Y Z 2 of 8 October 2020 DMN2024UFDF www.diodes.com Diodes Incorporated Datasheet number: DS40595 Rev. 8 - 2 YWX YM

HS Compliance

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,

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Diodes
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PER
Pericom
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Pericom Technology
Pericom/Diodes
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Availability	Price	Buy Price	Quantity
3837 Ship by Wed. 30 Apr to Fri. 02 May MOQ : 1 Multiples : 1	1 : USD 0.5175 10 : USD 0.3487 100 : USD 0.1944 500 : USD 0.1573 1000 : USD 0.1441 3000 : USD 0.1254 6000 : USD 0.1089 9000 : USD 0.0979

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