DMN2026UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Low On-Resistance V R (BR)DSS DS(ON) Max T = +25C A Fast Switching Speed ESD Protected Gate 24m V = 4.5V GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 20V 6.2A 32m V = 2.5V GS Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description and Applications Case: TSOT26 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ) and yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish Annealed over Copper Leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.013 grams (Approximate) D TSOT26 D 1 6 D G D 2 5 D 3 4 G S Gate Protection S Diode Equivalent Circuit Top View Top View Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN2026UVT-7 TSOT26 3,000/Tape & Reel DMN2026UVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2026UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage 10 V VGSS Steady State 6.2 A Continuous Drain Current (Note 6) V = 4.5V T = +25C I GS A D Maximum Body Diode Forward Current (Note 6) 2 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 20 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.15 W T = +25C P A D Steady state 107 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 76 Total Power Dissipation (Note 6) 1.75 W T = +25C P A D Steady state 75 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 6) R 16 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 10 A V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.5 V V = V , I = 250A GS(TH) DS GS D 18 24 V = 4.5V, I = 6.2A GS D Static Drain-Source On-Resistance m R DS(ON) 21 32 V = 2.5V, I = 5.2A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) 887 Input Capacitance C iss V = 10V, V = 0V DS GS 91 Output Capacitance pF Coss f = 1.0MHz 37 Reverse Transfer Capacitance C rss Gate Resistance 191 R V = 0V, V = 0V, f = 1MHz g DS GS 10 Total Gate Charge (V = 4.5V) Q GS g 18.4 Total Gate Charge (V = 8V) Q GS g nC V = 10V, I = 6.5A DS D 1.3 Gate-Source Charge Q gs 1.8 Gate-Drain Charge Q gd 53 Turn-On Delay Time t D(ON) 66 Turn-On Rise Time t R V = 10V, V = 4.5V, DS GS ns 619 Turn-Off Delay Time t R = 6, R = 10, I = 1A D(OFF) G L D 197 Turn-Off Fall Time t F Reverse Recovery Time 119 ns t I = 4A, di/dt = 100A/s RR F Reverse Recovery Charge - 96 nC Q I = 4A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2026UVT May 2015 Diodes Incorporated www.diodes.com Document number: DS37960 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT