DMN2027UPS 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low R Ensures On-State Losses Are Minimized DS(ON) I Max D V R Max (BR)DSS DS(ON) Small Form Factor Thermally Efficient Package Enables Higher T = +25C C 36A 12.5m V = 4.5V Density End Products GS 20V 19m V = 2.5V 30A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 standards for High Reliability Description This MOSFET is designed to minimize the on-state resistance (R ), yet maintain superior switching performance, making it DS(ON) ideal for high-efficiency power management applications. Mechanical Data Applications Case: POWERDI 5060-8 Backlighting Case Material: Molded Plastic, Green Molding Compound. Power Management Functions UL Flammability Classification Rating 94V-0 DC-DC Converters Moisture Sensitivity: Level 1 per J-STD-020 Terminal Connections: See Diagram Below Weight: 0.097 grams (Approximate) POWERDI5060-8 S D Pin 1 S S S D S G S D D G D D D D Top View To p View Bottom View Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2027UPS-13 2,500/Tape & Reel POWERDI5060-8 Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2027UPS Marking Information D D D D = Manufacturers Marking N2027UP = Product Type Marking Code N2027UP YYWW = Date Code Marking YY = Year (ex: 15 = 2015) WW = Week (01 - 53) YY WW S S S G Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = +25C Steady A 10 A I D State 8 T = +70C A Continuous Drain Current (Note 6) V = 4.5V GS Steady T = +25C 36 C I A D State 29 T = +70C C Steady T = +25C 8.2 A A I D State 6.6 T = +70C A Continuous Drain Current (Note 6) V = 2.5V GS Steady T = +25C 30 C A I D State 23 T = +70C C Maximum Continuous Body Diode Forward Current (Infinite Heatsink) I 60 A S Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) I 60 A DM Avalanche Current (Note 7) L = 0.1mH I 6.8 A AS Avalanche Energy (Note 7) L = 0.1mH 2.3 mJ EAS Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) P 1.1 W D Steady State 112 C/W Thermal Resistance, Junction to Ambient (Note 5) R JA t<10s 58 C/W Total Power Dissipation (Note 6) P 1.9 W D Steady State 65 C/W Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 34 C/W Thermal Resistance, Junction to Case 5 C/W R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1-inch square copper plate. 7. IAS and EAS rating are based on low frequency and duty cycles to keep TJ = +25C. 2 of 8 DMN2027UPS September 2015 Diodes Incorporated www.diodes.com Document number: DS37940 Rev. 2 - 2 NEW PRODUCT AADDVVAANNCCEED I INNFFOORRMMAATTIIOONN