DMN2028UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low Input Capacitance I D Low On-Resistance V R (BR)DSS DS(ON) Max T = +25C A Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 24m V = 4.5V GS Halogen and Antimony Free. Green Device (Note 3) 20V 6.2A 32m V = 2.5V GS Mechanical Data Case: TSOT26 Description and Applications Case Material: Molded Plastic, Green Molding Compound. This new generation MOSFET is designed to minimize the on-state UL Flammability Classification Rating 94V-0 resistance (R ) and yet maintain superior switching performance, DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 making it ideal for high efficiency power management applications. Terminal Connections: See Diagram Terminals: Finish Tin Finish Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Power Management Functions Weight: 0.013 grams (Approximate) Backlighting D TSOT26 D 1 6 D D D 2 5 G G 3 4 S S Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN2028UVT-7 TSOT26 3,000/Tape & Reel DMN2028UVT-13 TSOT26 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2028UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage 8 V VGSS Steady State 6.2 A Continuous Drain Current (Note 6) V = 4.5V T = +25C I GS A D Maximum Body Diode Forward Current (Note 6) 1.5 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 40 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.2 W T = +25C P A D Steady state 105 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t<10s 76 Total Power Dissipation (Note 6) 1.6 W T = +25C P A D Steady state 76 Thermal Resistance, Junction to Ambient (Note 6) R JA t<10s 50 C/W Thermal Resistance, Junction to Case (Note 6) R 15 JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.5 V V = V , I = 250A GS(TH) DS GS D 20 24 V = 4.5V, I = 6.2A GS D Static Drain-Source On-Resistance m R DS(ON) 24 32 V = 2.5V, I = 5.2A GS D Diode Forward Voltage V 1.2 V V = 0V, I = 1.3A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 856 iss V = 10V, V = 0V DS GS Output Capacitance 83 pF Coss f = 1.0MHz Reverse Transfer Capacitance 78 C rss Total Gate Charge 8.3 Q g Gate-Source Charge 1.3 nC Q V = 4.5V, V = 10V, I = 6.2A gs GS DS D Gate-Drain Charge 3.1 Q gd Turn-On Delay Time t 13.2 D(ON) Turn-On Rise Time t 12.6 R VDD = 10V, VGS = 4.5V, ns Turn-Off Delay Time t 65 I = 1A, R = 6 D(OFF) D G Turn-Off Fall Time t 22 F Notes: 5. Device mounted on FR-4 PC board, with minimum recommended pad layout, single sided. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2028UVT May 2015 Diodes Incorporated www.diodes.com Document number: DS37128 Rev. 1 - 2 ADVANCE INFORMATION NEW PRODUCT