DMN2029USD 20V DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I Low Input Capacitance D V R Package (BR)DSS DS(on) max T = +25C A Low On-Resistance 25m V = 4.5V 5.8A GS Fast Switching Speed 20V SO-8 35m V = 2.5V 4.8A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description This new generation MOSFET has been designed to minimize the on- Mechanical Data state resistance (R ) and yet maintain superior switching DS(ON) performance, making it ideal for high efficiency power management Case: SO-8 applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Applications Terminal Connections: See Diagram DC-DC Converters Terminals: Finish Tin Finish annealed over Copper leadframe. Power Management Functions Solderable per MIL-STD-202, Method 208 Backlighting Weight: 0.074 grams (approximate) S1 D1 D1 D2 SO-8 D1 G1 S2 D2 G1 G2 G2 D2 S1 S2 Top View Top View Equivalent Circuit Pin Configuration Ordering Information (Note 4) Part Number Case Packaging DMN2029USD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2029USD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS Steady T = +25C 5.8 A I A D State = +70C 4.7 T A Continuous Drain Current (Note 6) V = 4.5V GS T = +25C 6.9 A t < 10s A I D 5.7 T = +70C A Maximum Body Diode Forward Current (Note 6) I 2.1 A S Pulsed Drain Current (10 s pulse, duty cycle = 1%) I 30 A DM Avalanche Current (Note 7) L = 0.1mH I 15 A AS Avalanche Energy (Note 7) L = 0.1mH E 11.2 mJ AS Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units T = +25C 1.2 A Total Power Dissipation (Note 5) W P D T = +70C 0.7 A Steady state 115 Thermal Resistance, Junction to Ambient (Note 5) C/W R JA t < 10s 70 T = +25C 1.4 A Total Power Dissipation (Note 6) W P D T = +70C 0.9 A Steady state 95 Thermal Resistance, Junction to Ambient (Note 6) R JA t < 10s 60 C/W Thermal Resistance, Junction to Case (Note 6) R 14.5 JC Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 8) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current I 1 A V = 16V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 8) Gate Threshold Voltage V 0.6 1.5 V V = V , I = 250A GS(th) DS GS D 14 25 V = 4.5V, I = 6.5A GS D Static Drain-Source On-Resistance R m DS(ON) 19 35 V = 2.5V, I = 5.4A GS D Forward Transfer Admittance 10 S Y V = 5V, I = 6.5A fs DS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1.3A SD GS S DYNAMIC CHARACTERISTICS (Note 9) Input Capacitance 1171 C iss V = 10V, V = 0V DS GS Output Capacitance C 133 pF oss f = 1.0MHz Reverse Transfer Capacitance C 110 rss Gate Resistance R 1.2 V = 0V, V = 0V, f = 1.0MHz G DS GS Total Gate Charge (V = 4.5V) Q 10.4 GS g Total Gate Charge (V = 8V) Q 18.6 GS g nC V = 10V, I = 3A DS D Gate-Source Charge Q 1.9 gs Gate-Drain Charge 2.3 Q gd Turn-On Delay Time 16.5 t D(on) Turn-On Rise Time 33.3 t V = 4.5V, V = 10V, R = 6 , r GS DD GEN nS Turn-Off Delay Time 119.3 I = 1A t D D(off) Turn-Off Fall Time t 53.5 f Body Diode Reverse Recovery Time t 7.5 nS I = 6.5A, dI/dt = 100A/s rr S Body Diode Reverse Recovery Charge Q 2.0 nC I = 6.5A, dI/dt = 100A/s rr S Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. I and E rating are based on low frequency and duty cycles to keep T = +25C AR AR J 8. Short duration pulse test used to minimize self-heating effect. 9. Guaranteed by design. Not subject to product testing. 2 of 6 May 2013 DMN2029USD Diodes Incorporated www.diodes.com Document number: DS36127 Rev. 3 - 2 ADVANCE INFORMATION NEW PRODUCT