DMN2040LTS DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: TSSOP-8L Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connections: See Diagram Below Fast Switching Speed Marking Information: See Page 4 Low Input/Output Leakage Ordering Information: See Page 4 Lead Free By Design/RoHS Compliant (Note 1) Weight: 0.039 grams (approximate) Gree Device (Note 2) Qualified to AEC-Q101 Standards for High Reliability D1 D2 G1 G2 1 D D 8 S1 S2 2 7 S1 S2 3 6 G1 G2 4 5 S1 S2 Top View Internal Schematic TOP VIEW BOTTOM VIEW Pin Configuration Maximum Ratings T = 25C unless otherwise specified A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS T = 25C Steady A 6.7 Continuous Drain Current (Note 3) I A D State 4.9 T = 70C A Pulsed Drain Current (Note 4) 30 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 3) P 0.89 W D 140 C/W Thermal Resistance, Junction to Ambient T = 25C R A JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Notes: 1. No purposefully added lead. 2. Diodes Inc. sGree policy can be found on our website at DMN2040LTS Electrical Characteristics T = 25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 5) Drain-Source Breakdown Voltage BV 20 - - V V = 0V, I = 250 A DSS GS D Zero Gate Voltage Drain Current I - - 1.0 A V = 20V, V = 0V DSS DS GS Gate-Source Leakage - - 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 5) Gate Threshold Voltage 0.5 - 1.2 V V V = V , I = 250 A GS(th) DS GS D 19 26 V = 4.5V, I = 6.0A GS D Static Drain-Source On-Resistance R - m DS (ON) 26 36 V = 2.5V, I = 5.2A GS D Forward Transfer Admittance - 8 - S Y V = 10V, I = 6A fs DS D Diodes Forward Voltage V - 0.7 1.2 V Is = 1.7A, V = 0V SD GS DYNAMIC CHARACTERISTICS (Note 6) - 570 - Input Capacitance C pF iss V = 10V, V = 0V, DS GS - 85 - Output Capacitance C pF oss f = 1.0MHz - 75 - Reverse Transfer Capacitance C pF rss - 1.23 - Gate Resistance R V = 0V, V = 0V, f = 1MHz g DS GS SWITCHING CHARACTERISTICS (Note 6) - 5.2 - Total Gate Charge Q nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q - 0.86 - nC gs I = 7A D Gate-Drain Charge - 1.25 - nC Q gd Turn-On Delay Time - 5.2 - ns t D(on) Turn-On Rise Time - 13.5 - ns t V = 10V, V = 4.5V, r DD GS Turn-Off Delay Time 19.8 = 1.5, R = 1 t - - ns R D(off) L G 6.1 Turn-Off Fall Time t - - ns f Notes: 5. Short duration pulse test used to minimize self-heating effects. 6. Guaranteed by design. Not subject to production testing. 20 20 V = 5V V = 10.0V DS GS V = 4.5V GS 16 V = 3.0V GS 15 V = 2.5V GS V = 2.0V GS 12 10 8 T = 150C A T = 125C 5 A 4 T = 85C A T = 25C A T = -55C V = 1.5V A GS 0 0 01 2 3 4 5 01 2 3 4 V , DRAIN-SOURCE VOLTAGE (V) V , GATE SOURCE VOLTAGE (V) DS GS Fig. 1 Typical Output Characteristics Fig. 2 Typical Transfer Characteristics 2 of 6 October 2009 DMN2040LTS Diodes Incorporated www.diodes.com Document number: DS31941 Rev. 2 - 2 NEW PRODUCT I, DRAIN CURRENT (A) D I, DRAIN CURRENT (A) D