NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U DMN2041L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 Low Gate Threshold Voltage Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020 Fast Switching Speed Terminals: Finish Matte Tin Annealed over Copper Leadframe. Low Input/Output Leakage Solderable per MIL-STD-202, Method 208 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Terminals Connections: See Diagram Below Halogen and Antimony Free. Green Device (Note 3) Weight: 0.008 grams (Approximate) Qualified to AEC-Q101 Standards for High Reliability Drain D Gate G S Source Top View Internal Schematic Top View Ordering Information (Note 4) Part Number Case Packaging DMN2041L-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See NOT RECOMMENDED FOR NEW DESIGN USE DMN2040U DMN2041L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.4 A Continuous Drain Current (Note 5) I A D State 4.5 T = +70C A Pulsed Drain Current (Note 6) 30 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 0.78 W P D 161 C/W Thermal Resistance, Junction to Ambient T = +25C R A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by junction temperature. Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D 1.0 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.5 1.2 V VGS(TH) VDS = VGS, ID = 250A V = 4.5V, I = 6.0A 20 28 GS D Static Drain-Source On-Resistance m R DS(ON) 26 41 V = 2.5V, I = 5.2A GS D Forward Transfer Admittance 6 S Y V = 10V, I = 6A fs DS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 550 Ciss V = 10V, V = 0V, DS GS Output Capacitance 88 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 81 rss Gate Resistance R 1.34 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge (10V) 15.6 nC Q V = 10V, V = 10V, I = 6A g GS DS D Total Gate Charge (4.5V) Q 7.2 g Gate-Source Charge 1.0 nC Q V = 4.5V, V = 10V, I = 6A gs GS DS D Gate-Drain Charge Q 1.9 gd Turn-On Delay Time 4.69 t D(ON) Turn-On Rise Time 13.19 t V = 10V, V = 4.5V, R DD GEN ns Turn-Off Delay Time t 22.10 R = 1, I = 6.7A D(OFF) GEN D Turn-Off Fall Time t 6.43 F Notes: 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2041L January 2019 Diodes Incorporated www.diodes.com Document number: DS31962 Rev. 4 - 3