DMN2041LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features Low On-Resistance I max D V R max (BR)DSS DS(ON) Low Gate Threshold Voltage T = +25C A Low Input Capacitance 28m V = 4.5V 7.63A Fast Switching Speed GS Low Input/Output Leakage 20V 41m V = 2.5V 4.35A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability Description Mechanical Data This MOSFET has been designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: SO-8 ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: Finish - Matte Tin annealed over Copper lead frame. Power Management Functions Solderable per MIL-STD-202, Method 208 DC-DC Converters Marking Information: See Page 4 Ordering Information: See Page 4 Weight: 0.072 grams (approximate) SO-8 D1 D2 S1 D1 G1 D1 G1 G2 S2 D2 G2 D2 S1 S2 TOP VIEW TOP VIEW N-Channel MOSFET N-Channel MOSFET Internal Schematic Ordering Information (Note 4) Part Number Case Packaging DMN2041LSD-13 SO-8 2,500/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2041LSD Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 5) Steady T = +25C 7.63 A I A D State 4.92 T = +85C A Pulsed Drain Current (Note 6) 30 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 1.16 W P D Thermal Resistance, Junction to Ambient T = +25C R 107.4 C/W A JA Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250 A DSS GS D 1 A Zero Gate Voltage Drain Current T = +25C I V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 1.2 V V = V , I = 250 A GS(th) DS GS D 19 28 V = 4.5V, I = 6A GS D Static Drain-Source On-Resistance m R DS (ON) 25 41 V = 2.5V, I = 5.2A GS D Forward Transfer Admittance 6 S Y V = 10V, I = 6A fs DS D Diode Forward Voltage 0.7 1.2 V V V = 0V, I = 1.7A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 550 iss V =10V, V = 0V, DS GS Output Capacitance C 88 pF oss f = 1MHz Reverse Transfer Capacitance C 81 rss Gate Resistance 1.34 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 15.6 nC Q V = 10V, V = 10V, I = 6A g GS DS D Total Gate Charge Q 7.2 g V = 4.5 V, V = 10V, GS DS Gate-Source Charge Q 1 nC gs I = 6A D Gate-Drain Charge Q 1.9 gd Turn-On Delay Time t 4.69 D(on) Turn-On Rise Time 13.19 t V = 10V, V = 4.5V, r DD GEN ns Turn-Off Delay Time 22.1 R = 1 , I = 6.7A t g D D(off) Turn-Off Fall Time 6.43 t f Notes: 5. Device mounted on FR-4 PCB with minimum recommended pad layout. 6. Repetitive rating, pulse width limited by function temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 February 2014 DMN2041LSD Diodes Incorporated www.diodes.com Document number: DS31964 Rev. 3 - 2 NEW PRODUCT