DMN2041UVT DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D MAX BV R DSS DS(ON) MAX Low Input Capacitance T = +25C A Fast Switching Speed 5.8A Low Input/Output Leakage 28m V = 4.5V GS 20V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 32m V = 2.5V 5.4A GS Halogen and Antimony Free. Green Device (Note 3) For automotive applications requiring specific change control (i.e. parts qualified to AEC-Q101, PPAP capable, and manufactured in IATF 16949 certified facilities), please Description contact us or your local Diodes representative. This new generation MOSFET is designed to minimize the on-state DMN2041UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 8 V GSS 5.8 T = +25C Steady A A Continuous Drain Current (Note 6) V = 4.5V I GS D State 4.6 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) I 1.3 A S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 36 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 1.1 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) R 113 C/W JA Total Power Dissipation (Note 6) P 0.92 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) R 87 C/W JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D 1.0 Zero Gate Voltage Drain Current T = +25C I A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage 100 nA I V = 8V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.4 0.9 V V V = V , I = 250A GS(TH) DS GS D 17 28 V = 4.5V, I = 8.2A GS D Static Drain-Source On-Resistance R 22 32 m V = 2.5V, I = 3.3A DS(ON) GS D 32 40 V = 1.8V, I = 2.0A GS D Diode Forward Voltage V 0.7 0.9 V V = 0V, I = 2.25A SD GS D DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 689 pF C iss V = 10V, V = 0V DS GS Output Capacitance 89 pF C oss f = 1.0MHz Reverse Transfer Capacitance 79 pF C rss Gate Resistance 1.05 R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge 9.1 nC Q g Gate-Source Charge 0.3 nC Q V = 4.5V, V = 10V, I = 8.2A gs GS DS D Gate-Drain Charge 2.1 nC Q gd Turn-On Delay Time t 9 ns D(ON) Turn-On Rise Time t 21 ns R V = 10V, V = 4.5V, DS GS Turn-Off Delay Time t 32 ns R = 10, R = 6, I = 1A D(OFF) L g D Turn-Off Fall Time t 17 ns F Notes: 5. Device mounted on FR-4 PCB, with minimum recommended pad layout. 6. Device mounted on 1 x 1 FR-4 PCB with high coverage 2oz. Copper, single sided. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 October 2019 DMN2041UVT Diodes Incorporated www.diodes.com Document number: DS41720 Rev. 2 - 2 ADVANCE INFORMATION