DMN2046U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I max D V R max (BR)DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 72m V = 4.5V 3.4A GS Low Input/Output Leakage 20V 110m V = 2.5V 2.7A GS ESD protected gate Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description and Applications Mechanical Data This MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, making it DS(on) Case: SOT23 ideal for high-efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Battery Charging Moisture Sensitivity: Level 1 per J-STD-020 Power Management Functions Terminals: Finish Matte Tin Annealed over Copper Leadframe. DC-DC Converters Solderable per MIL-STD-202, Method 208 Portable Power Adaptors Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) D SOT23 D G S G ESD PROTECTED Gate Protection Top View S Diode Top View Pin Configuration Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2046U-7 SOT23 3,000/Tape & Reel DMN2046U-13 SOT23 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2046U Maximum Ratings ( T = +25C unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 3.4 A Continuous Drain Current (Note 6) V = 10V I A GS D State 2.7 T = +70C A Pulsed Drain Current (Pulse width 10S, Duty Cycle 1%) 18 A I DM Thermal Characteristics Characteristic Symbol Value Unit Power Dissipation (Note 5) 0.76 W P D Thermal Resistance, Junction to Ambient (Note 5) 166 C/W R JA Power Dissipation (Note 6) 1.26 W P D Thermal Resistance, Junction to Ambient (Note 6) 100 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics T = +25C unless otherwise specified A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 - - V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current TJ = +25C - - 1.0 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage I - - 10 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 - 1.4 V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 3.6A 72 GS D Static Drain-Source On-Resistance - - m R DS (ON) 110 V = 2.5V, I = 3.1A GS D Diode Forward Voltage V - - 1.2 V V = 0V, I = 0.94A SD GS S DYNAMIC CHARACTERISTICS (Note 8) - 292 - Input Capacitance C pF iss V = 10V, V = 0V, DS GS - 36 - Output Capacitance pF Coss f = 1.0MHz Reverse Transfer Capacitance - 32 - pF C rss Gate Resistance - 63 - R V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge - 3.8 - nC Q g V = 4.5V, V = 10V, I = GS DS D Gate-Source Charge - 0.5 - nC Q gs 5.1A - 0.8 - Gate-Drain Charge Q nC gd 6.7 Turn-On Delay Time t - - ns D(on) 25.1 Turn-On Rise Time t - - ns r V = 10V, V = 4.5V, DD GS 69.1 Turn-Off Delay Time t - - ns R = 2.4, R = 6 D(off) L G 34.1 Turn-Off Fall Time t - - ns f 18.2 Reverse Recovery Time - - ns I = 4.1A, di/dt = 100A/s trr F Reverse Recovery Charge - 3.6 - nC I = 4.1A, di/dt = 100A/s Q F rr Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1-inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 DMN2046U February 2015 Diodes Incorporated www.diodes.com Document number: DS37649 Rev. 2 - 2