DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 29m V = 4.5V Case Material: Molded Plastic, Green Molding Compound. GS 50m V = 2.5V UL Flammability Classification Rating 94V-0 GS 100m V = 2.0V Moisture Sensitivity: Level 1 per J-STD-020D GS Very Low Gate Threshold Voltage Terminal Connections: See Diagram Low Input Capacitance Terminals: Finish Matte Tin annealed over Copper Fast Switching Speed leadframe. Solderable per MIL-STD-202, Method 208 e3 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.008 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23 Drain D Gate G S Source Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2050L-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2050L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 5) 5.9 A I D Pulsed Drain Current (Note 6) 21 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) 90 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.45 1.4 V V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 5.0A GS D 24 29 Static Drain-Source On-Resistance R 42 50 m V = 2.5V, I = 3.1A DS(ON) GS D 68 100 V = 2.0V, I = 1.5A GS D Forward Transfer Admittance Y 8 S V =5V, I = 2.1A fs DS D Diode Forward Voltage (Note 7) V 0.9 1.4 V V = 0V, I = 2.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 532 pF iss V = 10V, V = 0V DS GS Output Capacitance C 144 pF oss f = 1.0MHz Reverse Transfer Capacitance 117 pF C rss Gate Resistance 1.3 R V = 0V, V = 0V, f = 1.0MHz G DS GS SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge 6.7 Q V = 10V, V = 4.5V, I = 5.0A g DS GS D Gate-Source Charge 0.8 nC Q V = 10V, V = 4.5V, I = 5.0A gs DS GS D Gate-Drain Charge Q 3.0 V = 10V, V = 4.5V, I = 5.0A gd DS GS D Notes: 5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R = 90C/W. JA 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 October 2013 DMN2050L Diodes Incorporated www.diodes.com Document number: DS31502 Rev. 4 - 2 NEW PRODUCT