X-On Electronics has gained recognition as a prominent supplier of DMN2050L MOSFETs across the USA, India, Europe, Australia, and various other global locations. DMN2050L MOSFETs are a product manufactured by Diodes Incorporated. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

DMN2050L Diodes Incorporated

DMN2050L electronic component of Diodes Incorporated
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Part No.DMN2050L
Manufacturer: Diodes Incorporated
Category: MOSFETs
Description: MOSFET, N CH, 20V, 5.9A, SOT23
Datasheet: DMN2050L Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.2967 ea
Line Total: USD 29.67 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Tue. 12 Nov to Mon. 18 Nov
MOQ : 100
Multiples : 1
100 : USD 0.2967
500 : USD 0.1881
1500 : USD 0.1845

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the DMN2050L from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the DMN2050L and other electronic components in the MOSFETs category and beyond.

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DMN2050L N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Low On-Resistance Case: SOT23 29m V = 4.5V Case Material: Molded Plastic, Green Molding Compound. GS 50m V = 2.5V UL Flammability Classification Rating 94V-0 GS 100m V = 2.0V Moisture Sensitivity: Level 1 per J-STD-020D GS Very Low Gate Threshold Voltage Terminal Connections: See Diagram Low Input Capacitance Terminals: Finish Matte Tin annealed over Copper Fast Switching Speed leadframe. Solderable per MIL-STD-202, Method 208 e3 Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Weight: 0.008 grams (approximate) Halogen and Antimony Free. Green Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability SOT23 Drain D Gate G S Source Top View Top View Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2050L-7 SOT23 3000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant. 2. See DMN2050L Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Units Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Drain Current (Note 5) 5.9 A I D Pulsed Drain Current (Note 6) 21 A I DM Thermal Characteristics Characteristic Symbol Value Units Total Power Dissipation (Note 5) 1.4 W P D Thermal Resistance, Junction to Ambient (Note 5) 90 C/W R JA Operating and Storage Temperature Range -55 to +150 C T , T J STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic SymbolMin Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage nA I 100 V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.45 1.4 V V V = V , I = 250A GS(th) DS GS D V = 4.5V, I = 5.0A GS D 24 29 Static Drain-Source On-Resistance R 42 50 m V = 2.5V, I = 3.1A DS(ON) GS D 68 100 V = 2.0V, I = 1.5A GS D Forward Transfer Admittance Y 8 S V =5V, I = 2.1A fs DS D Diode Forward Voltage (Note 7) V 0.9 1.4 V V = 0V, I = 2.0A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 532 pF iss V = 10V, V = 0V DS GS Output Capacitance C 144 pF oss f = 1.0MHz Reverse Transfer Capacitance 117 pF C rss Gate Resistance 1.3 R V = 0V, V = 0V, f = 1.0MHz G DS GS SWITCHING CHARACTERISTICS (Note 8) Total Gate Charge 6.7 Q V = 10V, V = 4.5V, I = 5.0A g DS GS D Gate-Source Charge 0.8 nC Q V = 10V, V = 4.5V, I = 5.0A gs DS GS D Gate-Drain Charge Q 3.0 V = 10V, V = 4.5V, I = 5.0A gd DS GS D Notes: 5. Device mounted on FR-4 PCB, on 2oz Copper pad layout with R = 90C/W. JA 6. Repetitive rating, pulse width limited by junction temperature. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 6 October 2013 DMN2050L Diodes Incorporated www.diodes.com Document number: DS31502 Rev. 4 - 2 NEW PRODUCT

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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