DMN2053U N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features I max D Low On-Resistance BV R max DSS DS(ON) T = +25C A Low Input Capacitance Fast Switching Speed 29m V = 10V 6.5A GS 20V Low Input/Output Leakage 35m V = 4.5V 5.4A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Description Mechanical Data This new generation MOSFET is designed to minimize the on-state resistance (R ) and yet maintain superior switching performance, DS(ON) Case: SOT23 making it ideal for high efficiency power management applications. Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Applications Moisture Sensitivity: Level 1 per J-STD-020 Terminals: Finish Matte Tin Annealed over Copper General Purpose Interfacing Switch e3 Leadframe. Solderable per MIL-STD-202, Method 208 Power Management Functions Terminals Connections: See Diagram Below Weight: 0.008 grams (Approximate) SOT23 D D G S G S Top View Top View Equivalent Circuit Ordering Information (Notes 4) Part Number Case Packaging DMN2053U-7 SOT23 3000/Tape & Reel DMN2053U-13 SOT23 10000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2053U Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 6.5 A Continuous Drain Current (Note 6) I A D State 5.4 T = +70C A Pulsed Drain Current (380s Pulse, Duty Cycle = 1%) 22 A I DM Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.8 W D Thermal Resistance, Junction to Ambient (Note 5) Steady State C/W R 160 JA Total Power Dissipation (Note 6) 1.3 W PD Thermal Resistance, Junction to Ambient (Note 6) Steady State 93 C/W R JA Operating and Storage Temperature Range T T -55 to +150 C J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current T = +25C I 1.0 A V = 20V, V = 0V J DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.5 0.95 1.2 V V = V , I = 250A GS(TH) DS GS D 26 29 V = 10V, I = 6A GS D 28 35 V = 4.5V, I = 5A GS D Static Drain-Source On-Resistance R m DS(ON) 35 48 V = 2.5V, I = 4A GS D 47 91 V = 1.8V, I = 2A GS D Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 414 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 58 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 43 pF rss Gate Resistance R 3.6 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 4.6 nC g V = 4.5V, V = 10V, GS DS Gate-Source Charge Q 0.5 nC gs I = 6A D Gate-Drain Charge Q 1.4 nC gd Turn-On Delay Time t 2.6 ns D(ON) Turn-On Rise Time 2.9 ns t V = 10V, V = 5V, R DD GS Turn-Off Delay Time 13.5 ns R = 1.7, R = 6 t L G D(OFF) Turn-Off Fall Time 3.8 ns t F Reverse Recovery Time 6.8 ns t I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge 1.2 nC Q I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing 2 of 7 DMN2053U February 2018 Diodes Incorporated www.diodes.com Document number: DS40416 Rev. 2 - 2 ADVANCED INFORMATION