DMN2053UVT N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I D Device BV R DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 35m V = 4.5V 4.6A GS N-Channel 20V Low Input/Output Leakage 4.2A 43m VGS= 2.5V Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) Mechanical Data Description Case: TSOT26 This new generation MOSFET is designed to minimize the on-state Case Material: Molded Plastic, Green Molding Compound. resistance (R ) yet maintain superior switching performance, DS(ON) UL Flammability Classification Rating 94V-0 making it ideal for high-efficiency power management applications. Moisture Sensitivity: Level 1 per J-STD-020 Terminals Connections: See Diagram Applications Terminals: FinishMatte Tin Annealed over Copper Leadframe. Backlighting e3 Solderable per MIL-STD-202, Method 208 DC-DC Converters Weight: 0.013 grams (Approximate) Power Management Functions D 2 D1 G1 1 6 D1 S2 2 5 S1 G2 G1 G2 3 4 D2 TSOT26 S2 S1 Equivalent Circuit Ordering Information (Note 4) Part Number Case Packaging DMN2053UVT-7 TSOT26 3000 / Tape & Reel DMN2053UVT-13 TSOT26 10,000 / Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2053UVT Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Q1 Value Unit Drain-Source Voltage 20 V V DSS Gate-Source Voltage 12 V V GSS Steady T = +25C 4.6 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 3.7 T = +70C A Maximum Continuous Body Diode Forward Current (Note 6) 1.4 A I S Pulsed Drain Current (10s Pulse, Duty Cycle = 1%) 22 A I DM Thermal Characteristics Characteristic Symbol Value Unit Total Power Dissipation (Note 5) T = +25C P 0.7 W A D Steady State Thermal Resistance, Junction to Ambient (Note 5) 173 C/W R JA Total Power Dissipation (Note 6) T = +25C P 1.1 W A D Steady State Thermal Resistance, Junction to Ambient (Note 6) 108 R JA C/W Thermal Resistance, Junction to Case 37 R JC Operating and Storage Temperature Range -55 to +150 C T T J, STG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage 20 V BV V = 0V, I = 250A DSS GS D Zero Gate Voltage Drain Current 1.0 A I V = 20V, V = 0V DSS DS GS Gate-Source Leakage I 100 nA V = 12V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.4 1.0 V V = V , I = 250A GS(TH) DS GS D V = 4.5V, I = 5.0A GS D 35 Static Drain-Source On-Resistance R 43 m V = 2.5V, I = 4.0A DS(ON) GS D 56 V = 1.8V, I = 2.0A GS D Diode Forward Voltage V 0.7 1.2 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 369 C iss V = 10V, V = 0V DS GS Output Capacitance 54 pF C oss f = 1.0MHz Reverse Transfer Capacitance 32 C rss Gate Resistance 4.1 R V = 0V, V = 0V, f = 1MHz g DS GS 3.6 Total Gate Charge (V = 4.5V) Q GS g 0.4 Gate-Source Charge Q nC V = 4.5V ,V = 10V, I = 6A gs GS DS D 1.0 Gate-Drain Charge Q gd 2.6 Turn-On Delay Time t D(ON) 3.0 Turn-On Rise Time t R V = 10V, V = 5V, DS GS ns 12.5 Turn-Off Delay Time t D(OFF) R = 6, I = 6A G D Turn-Off Fall Time 3.6 t F Reverse Recovery Time 6.0 ns t RR I = 1A, di/dt = 100A/s F Reverse Recovery Charge 0.9 nC Q RR Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to production testing. 2 of 7 August 2018 DMN2053UVT www.diodes.com Diodes Incorporated Document number: DS40904 Rev. 2 - 2