DMN2053UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits I Max Low On-Resistance D BV R Max DSS DS(ON) T = +25C Low Input Capacitance A Fast Switching Speed 56m V = 4.5V 2.9A GS Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) 65m V = 2.5V 2.7A GS 20V Halogen and Antimony Free. Green Device (Note 3) 93m V = 1.8V 2.2A GS 140m V = 1.5V 1.8A GS Mechanical Data Case: SOT323 Description and Applications Case Material: Molded Plastic,Gree Molding Compound. This MOSFET has been designed to minimize the on-state resistance UL Flammability Classification Rating 94V-0 (R ) and yet maintain superior switching performance, making it DS(ON) Moisture Sensitivity: Level 1 per J-STD-020 ideal for high efficiency power management applications. Terminal Connections Indicator: See Diagram Terminals: Finish Matte Tin Annealed over Copper Leadframe. General Purpose Interfacing Switch Solderable per MIL-STD-202, Method 208 e3 Power Management Functions Weight: 0.027 grams (Approximate) DC-DC Converters Analog Switch SOT323 D D G G S S Equivalent Circuit Top View Top View Ordering Information (Note 4) Part Number Case Packaging DMN2053UW-7 SOT323 3,000/Tape & Reel DMN2053UW-13 SOT323 10,000/Tape & Reel Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS), 2011/65/EU (RoHS 2) & 2015/863/EU (RoHS 3) compliant. 2. See DMN2053UW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady T = +25C 2.9 A Continuous Drain Current (Note 6) V = 4.5V I A GS D State 2.3 T = +70C A Pulsed Drain Current (10s Pulse, Duty Cycle=1%) 20 A I DM Maximum Body Diode Forward Current (Note 5) 1.0 A I S Thermal Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Total Power Dissipation (Note 5) P 0.47 W D Steady State Thermal Resistance, Junction to Ambient (Note 5) 268 C/W R JA Total Power Dissipation (Note 6) P 0.7 W D Steady State Thermal Resistance, Junction to Ambient (Note 6) 178 C/W R JA Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 20V, V = 0V C DSS DS GS Gate-Source Leakage I 1 A V = 10V, V = 0V GSS GS DS ON CHARACTERISTICS (Note 7) Gate Threshold Voltage V 0.35 1.0 V V = V , I = 250A GS(TH) DS GS D 39 56 V = 4.5V, I = 2A GS D 45 65 V = 2.5V, I = 2A GS D Static Drain-Source On-Resistance m R DS(ON) 51 93 V = 1.8V, I = 1A GS D 75 140 V = 1.5V, I = 0.5A GS D Diode Forward Voltage 0.7 1.0 V V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance 369 pF C iss V = 10V, V = 0V, DS GS Output Capacitance 54 pF C oss f = 1.0MHz Reverse Transfer Capacitance C 32 pF rss Gate Resistance R 4.1 V = 0V, V = 0V, f = 1MHz g DS GS Total Gate Charge Q 3.6 nC g Gate-Source Charge Q 0.4 nC V = 4.5V, V = 10V, I = 6A gs GS DS D Gate-Drain Charge Q 1.0 nC gd Turn-On Delay Time 2.6 ns tD(ON) Turn-On Rise Time 3.0 ns t V = 10V, V = 5V, R DD GS Turn-Off Delay Time 12.5 ns R = 6, I = 6A t G D D(OFF) Turn-Off Fall Time 3.6 ns t F Reverse Recovery Time 6.0 ns t I = 1.0A, di/dt = 100A/s RR F Reverse Recovery Charge 0.9 nC Q I = 1.0A, di/dt = 100A/s RR F Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 DMN2053UW July 2019 Diodes Incorporated www.diodes.com Document number: DS41138 Rev. 2 - 2 NEW PRODUCT