NOT RECOMMENDED FOR NEW DESIGN USE DMN2053UW DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits Low On-Resistance I Max D BV R Max DSS DS(ON) Low Input Capacitance TA = +25C Fast Switching Speed 56m VGS = 4.5V 2.8A Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2) Halogen and Antimony Free. Green Device (Note 3) 65m V = 2.5V 2.6A GS 20V For automotive applications requiring specific change control 93m V = 1.8V 2.2A GS (i.e.: parts qualified to AEC-Q100/101/200, PPAP capable, and manufactured in IATF 16949 certified facilities), please refer 140m VGS = 1.5V 1.8A to the related automotive grade (Q-suffix) part. A listing can be found at DMN2065UW Maximum Ratings ( T = +25C, unless otherwise specified.) A Characteristic Symbol Value Unit Drain-Source Voltage V 20 V DSS Gate-Source Voltage V 12 V GSS Steady TA = +25C 2.8 A ID State 2.3 TA = +70C Continuous Drain Current (Note 6) V = 4.5V GS TA = +25C 3.1 t<10s I A D 2.6 T = +70C A Steady T = +25C 2.2 A A ID State 1.7 TA = +70C Continuous Drain Current (Note 6) V = 1.8V GS TA = +25C 2.4 t<10s ID A 1.9 T = +70C A Pulsed Drain Current (10us Pulse, Duty Cycle=1%) I 30 A DM Maximum Body Diode Forward Current (Note 5) I 1.2 A S Thermal Characteristics ( TA = +25C, unless otherwise specified.) Characteristic Symbol Value Unit Total Power Dissipation (Note 5) 0.43 W PD Steady State 296 C/W Thermal Resistance, Junction to Ambient (Note 5) RJA t<10s 252 C/W Total Power Dissipation (Note 6) PD 0.7 W Steady State 178 C/W Thermal Resistance, Junction to Ambient (Note 6) RJA t<10s 151 C/W Operating and Storage Temperature Range -55 to +150 C TJ, TSTG Electrical Characteristics ( T = +25C, unless otherwise specified.) A Characteristic Symbol Min Typ Max Unit Test Condition OFF CHARACTERISTICS (Note 7) Drain-Source Breakdown Voltage BV 20 V V = 0V, I = 1mA DSS GS D Zero Gate Voltage Drain Current T = +25C I 1 A V = 20V, V = 0V C DSS DS GS Gate-Source Leakage 1 A IGSS VGS = 10V, VDS = 0V ON CHARACTERISTICS (Note 7) Gate Threshold Voltage 0.35 1.0 V VGS(TH) VDS = VGS, ID = 250A 52 56 VGS = 4.5V, ID = 2A 59 65 VGS = 2.5V, ID = 2A Static Drain-Source On-Resistance R m DS(ON) 60 93 VGS = 1.8V, ID = 1A 75 140 VGS = 1.5V, ID = 0.5A Forward Transfer Admittance Y 7 S V = 5V, I = 3.8A fs DS D Diode Forward Voltage V 0.7 1.0 V V = 0V, I = 1A SD GS S DYNAMIC CHARACTERISTICS (Note 8) Input Capacitance C 400.0 pF iss VDS = 10V, VGS = 0V, Output Capacitance C 73.8 pF oss f = 1.0MHz Reverse Transfer Capacitance C 65.6 pF rss Total Gate Charge 5.4 nC Qg VGS = 4.5V, VDS = 10V, Gate-Source Charge 0.7 nC Qgs I = 6A D Gate-Drain Charge 1.4 nC Qgd Turn-On Delay Time 3.5 ns tD(ON) VDD = 10V, VGS = 5V, Turn-On Rise Time 9.7 ns tR R = 1.7, R = 6 L G Turn-Off Delay Time tD(OFF) 23.8 ns Turn-Off Fall Time t 7.2 ns F Notes: 5. Device mounted on FR-4 substrate PC board, with minimum recommended pad layout. 6. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal bias to bottom layer 1inch square copper plate. 7. Short duration pulse test used to minimize self-heating effect. 8. Guaranteed by design. Not subject to product testing. 2 of 7 June 2021 DMN2065UW Diodes Incorporated www.diodes.com Document number: DS35554 Rev. 3 - 3 NEW PRODUCT